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High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications

An oxide layer, oxidation state technology, applied in the fields of magnetic field-controlled resistors, parts of electromagnetic equipment, and the manufacture/processing of electromagnetic devices, which can solve problems such as interface perpendicular magnetic anisotropy loss and reduction of free layer characteristics.

Pending Publication Date: 2020-05-05
TAIWAN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since it is likely to integrate STT-MRAM devices in a standard Complementary Metal Oxide Semiconductor (CMOS) process, which involves a total of up to 5 hours of 400°C annealing cycles, this high temperature is combined with the MgO Hk enhancement layer. Oxygen incorporation of high mobility in , usually causes loss of interfacial perpendicular magnetic anisotropy at the free layer / Hk enhancement layer interface and degrades the free layer properties

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  • High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
  • High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
  • High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications

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Embodiment Construction

[0034] Embodiments of the present invention relate to minimizing the resistance contribution of the Hk enhancement layer in a magnetic tunneling junction cell having a tunnel barrier / free layer / Hk enhancement layer configuration, and reducing the diffusion of oxygen and other species through the Hk enhancement layer, thereby The thermal stability of the magnetic tunneling junction is made up to 400°C, sufficient perpendicular magnetic anisotropy and high magnetoresistance ratio in the free layer are achieved. Magnetic tunneling junctions may be formed in MRAM, STT-MRAM, magnetic sensors, biosensors, spin torque oscillators, or other spintronic devices known in the art. In order to simplify the drawings, only one MTJ unit is depicted, but the memory devices described herein typically contain millions of MTJs arranged in rows and columns on a substrate. The terms "non-stoichiometric" and "under-oxidized" are used interchangeably when referring to the oxidation state of the Hk en...

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Abstract

A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a metal oxide (Mox) layer and a tunnel barrier layer to produce interfacial perpendicular magnetic anisotropy (PMA). The Mox layer has a non-stoichiometric oxidation state to minimize parasitic resistance, and comprises a dopant to fill vacant lattice sites thereby blocking oxygen diffusion through the Mox layer to preserve interfacial PMA and high thermal stability at process temperatures up to 400 DEG C. Various methods of forming the doped Mox layer include deposition of the M layer in a reactive environment of O2 and dopant species in gas form, exposing a metal oxide layer to dopant species in gas form, and ion implanting the dopant. In another embodiment, where the dopant is N, a metal nitride layer is formed on a metal oxide layer, and then an anneal step drives nitrogen into vacant sites in the metal oxide lattice.

Description

[0001] This application is related to the following: Docket No. HT17-014, Application No. 15 / 841,479, filed December 14, 2017; this patent has been assigned to a common assignee and is incorporated herein by reference in its entirety. technical field [0002] Embodiments of the present invention relate to magnetic tunnel junctions (magnetic tunnel junctions, MTJ), which include a free layer in contact with a tunnel barrier layer and a magnetic anisotropy (Hk) enhancement layer as a metal oxide, especially for reducing Hk Enhances the resistance of the layer and minimizes the diffusion of oxygen from the metal oxide / free layer interface to provide high perpendicular magnetic anisotropy (PMA) in the free layer, enabling process temperatures up to 400°C The thermal stability in the storage device can be achieved below. Background technique [0003] C. Slonczewski described in J.Magn.Magn.Mater.V 159, L1-L7 (1996) "Current driven excitation of magnetic multilayers" for writing m...

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Application Information

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IPC IPC(8): H01L43/08H01L43/10H01L43/12
CPCH10N50/85H10N50/01H10N50/10H10N50/80
Inventor 真杰诺裘地·玛丽·艾维塔童儒颖刘焕龙李元仁朱健
Owner TAIWAN SEMICON MFG CO LTD