a cu 2 znbi 2 the s 3 Nanorods and their applications

A nanorod, reaction technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problem of poor stability, fast compounding of quaternary semiconductors, quaternary chalcogenide semiconductors have not been reported, etc. problem, to achieve the effect of good application prospects and improved photocatalytic performance

Active Publication Date: 2021-08-03
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the synthesis of colloidal quaternary chalcogenides containing Cu (copper), Zn (zinc), In (indium), Ga (gallium) or Sn (tin) has been reported in the literature, the quaternary sulfur containing Bi (bismuth) family of semiconductors has not been reported so far
Moreover, the existing quaternary semiconductors that can be used for photocatalysis are limited by factors such as fast photoelectron hole-carrier recombination and poor stability.
Therefore, there is an urgent need for the emergence of new compounds with excellent properties that have not been reported.

Method used

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  • a cu <sub>2</sub> znbi <sub>2</sub> the s <sub>3</sub> Nanorods and their applications
  • a cu <sub>2</sub> znbi <sub>2</sub> the s <sub>3</sub> Nanorods and their applications
  • a cu <sub>2</sub> znbi <sub>2</sub> the s <sub>3</sub> Nanorods and their applications

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Experimental program
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Effect test

Embodiment 1

[0033] First, mix copper acetylacetonate, zinc acetate, bismuth nitrate and trioctylphosphine oxide (TOPO) in a stoichiometric ratio of 2:1:1 in an inert environment at 150-200°C to form a metal complex compound.

[0034] Then, at 125-140 ° C, according to the mass ratio of 120,000 mercaptan (DDT) and t-dodecyl mercaptan (t-DDM) sulfur precursors mixed into the reactor, 1- After 3 hours, centrifugation was performed.

[0035] Finally, the volume ratio of isopropanol and chloroform was controlled to be 1:1 for dispersion, and nanocrystals were separated.

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Abstract

The invention belongs to the technical field of quaternary chalcogenide semiconductor materials, and specifically discloses a Cu 2 ZnB 2 S 3 Nanorods were prepared as follows: under an inert atmosphere, copper acetylacetonate, zinc acetate, bismuth nitrate, and trioctylphosphine oxide were mixed in a stoichiometric ratio to form a complex, and then the sulfur precursors dodecanethiol and t-dodecylphosphine oxide were added. Alkylthiol, reacted for 1 to 3 hours, and separated to obtain the Cu 2 ZnB 2 S 3 Nano stave. Compared with the existing quaternary chalcogenide semiconductor materials, the photocatalytic performance of the nanorods of the present invention is improved. The present invention provides a kind of brand-new Cu 2 ZnB 2 S 3 Nanorods can be used in photocatalysis, photovoltaics, and photodiode sensor materials, and have good application prospects in the manufacture of LEDs, integrated circuits, transistors, and semiconductor lasers.

Description

technical field [0001] The invention belongs to the technical field of quaternary chalcogenide semiconductor materials, and more specifically relates to a Cu 2 ZnB 2 S 3 Chalcogenide nanorods and their applications. [0002] technical background [0003] Functional nanomaterials, as an emerging product, have received widespread attention, so there are more and more demands for their functions. Based on a single nanomaterial and preparation process, more products need to be developed to meet the above needs. [0004] Heterogeneous nanostructured nanomaterials as well as unconventional multi-component materials have received extensive attention and applications. Due to their unique properties, colloidal semiconductor nanocrystals have been increasingly studied in the past few decades. There have been related reports using these nanocrystals for photocatalytic and photovoltaic applications. CdTe and CuIn are currently widely used in photovoltaic thin films 1- x Ga x Se ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/00B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01G9/006C01P2002/84C01P2002/85C01P2004/03C01P2004/16
Inventor 佤基点·杰努瓦埃泽尔·阿金诺古冯柯米夏埃尔·吉尔斯西
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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