Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Molybdenum disulfide/tungsten disulfide multi-layer tantalum-doped thin film and preparation method and application thereof

A technology of tungsten disulfide and molybdenum disulfide, which is used in coatings, metal material coating processes, ion implantation plating, etc., can solve the mechanical properties requirements such as oxidation resistance, humidity sensitivity, high temperature oxidation performance and hardness that are not met. and other problems, to meet the requirements of stable lubrication and long service life, good temperature adaptive performance, and good friction and wear performance.

Inactive Publication Date: 2020-05-19
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it still does not meet the mechanical performance requirements of aerospace solid lubricating film atmospheric environment oxidation resistance, humidity sensitivity, high temperature oxidation performance and hardness, so MoS 2 and WS 2 The combination of the two is necessary to prepare multilayer films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Molybdenum disulfide/tungsten disulfide multi-layer tantalum-doped thin film and preparation method and application thereof
  • Molybdenum disulfide/tungsten disulfide multi-layer tantalum-doped thin film and preparation method and application thereof
  • Molybdenum disulfide/tungsten disulfide multi-layer tantalum-doped thin film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0030] As another aspect of the technical solution of the present invention, it relates to the preparation method of the aforementioned molybdenum disulfide / tungsten disulfide multilayer tantalum-doped film, which includes: adopting magnetron sputtering technology to sequentially deposit a titanium transition layer on the surface of the substrate , a titanium / tantalum / molybdenum disulfide / tungsten disulfide multilayer gradient transition layer and a molybdenum disulfide / tungsten disulfide multilayer tantalum doped layer to obtain the molybdenum disulfide / tungsten disulfide multilayer tantalum doped film.

[0031] In some embodiments, the method for preparing a titanium transition layer includes: using magnetron sputtering technology, using a titanium target as a cathode target, using a protective gas as a working gas, applying a target current to the titanium target, and applying a negative bias to the substrate pressure, thereby depositing a titanium transition layer on the su...

Embodiment 1

[0059] In this embodiment, the base material is nickel-based 718 high temperature steel and silicon wafer. Using magnetron sputtering technology to prepare a molybdenum disulfide / tungsten disulfide multilayer tantalum-doped film on the surface of the substrate, mainly including the following steps:

[0060] Perform mechanical polishing on the surface of the substrate, put the substrate material into an acetone solution for 15 minutes of ultrasonic cleaning, blow dry with nitrogen, put it in absolute ethanol solution for 15 minutes of ultrasonic cleaning, blow dry with nitrogen and take it out.

[0061] Put the cleaned substrate into the magnetron sputtering chamber, and evacuate until the vacuum degree is lower than 3×10 -5 Pa, and then sputtering and cleaning the target for 5 minutes, applying a bias voltage of -400V to the substrate sample, and performing plasma etching for 30 minutes, and the substrate temperature was 100°C.

[0062] Preparation and deposition of molybdenu...

Embodiment 2

[0073] In this embodiment, the base material is nickel-based 718 high temperature steel and silicon wafer. Using magnetron sputtering technology to prepare a molybdenum disulfide / tungsten disulfide multilayer tantalum-doped film on the surface of the substrate, mainly including the following steps:

[0074] Perform mechanical polishing on the surface of the substrate, put the substrate material into an acetone solution for 15 minutes of ultrasonic cleaning, blow dry with nitrogen, put it in absolute ethanol solution for 15 minutes of ultrasonic cleaning, blow dry with nitrogen and take it out.

[0075] Put the cleaned substrate into the magnetron sputtering chamber, and evacuate until the vacuum degree is lower than 3×10 -5 Pa, and then sputtering and cleaning the target for 5 minutes, applying a bias voltage of -450V to the substrate sample, and performing plasma etching for 20 minutes, and the substrate temperature is 150°C.

[0076] Preparation and deposition of molybdenum d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a molybdenum disulfide / tungsten disulfide multi-layer tantalum-doped thin film and a preparation method and application thereof. The molybdenum disulfide / tungsten disulfide multi-layer tantalum-doped thin film comprises a titanium transition layer, a titanium / tantalum / molybdenum disulfide / tungsten disulfide multi-layer gradient transition layer and a molybdenum disulfide / tungsten disulfide multi-layer tantalum-doped layer which are laminated in the thickness of the film in sequence. The preparation method comprises the step that a magnetron sputtering technology is adopted for depositing the titanium transition layer, the titanium / tantalum / molybdenum disulfide / tungsten disulfide multi-layer gradient transition layer and the molybdenum disulfide / tungsten disulfide multi-layer tantalum-doped layer on the surface of a substrate in sequence to obtain the molybdenum disulfide / tungsten disulfide multi-layer tantalum-doped thin film. The molybdenum disulfide / tungsten disulfide multi-layer tantalum-doped thin film has good bonding strength with the substrate, rigidity and elasticity modulus, has good friction and wear resistance, good temperature self-adaptability,damp heat resistance and high-temperature-oxidation resistance at different temperatures in the atmospheric environment, and can meet the demands of aerospace crafts for stable lubrication and long service life.

Description

technical field [0001] The invention relates to a molybdenum disulfide / tungsten disulfide multilayer film, in particular to a molybdenum disulfide / tungsten disulfide multilayer tantalum-doped film and a preparation method thereof, which can be used on the surface of a substrate under alternating temperature service in an atmospheric environment. It belongs to the technical field of surface treatment. Background technique [0002] Spacecraft and satellites need to experience harsh and complex environmental conditions such as high humidity and alternating high and low temperatures during the launch process. Due to the stability of solid lubricants in a wide range of temperature and humidity, solid lubricants are developed to meet the requirements of engineering specifications. MoS 2 and WS 2 It is a typical layered structure material, and the force between its molecular layers is weak van der Waals bonding force. The shear stress required for sliding along the (002) crysta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/06C23C14/16C23C14/35
CPCC23C14/0623C23C14/165C23C14/345C23C14/352C23C14/3492
Inventor 蒲吉斌曾春王海新王立平薛群基
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com