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A kind of Aln amorphous film and preparation method thereof

An amorphous thin film and thin film technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problem of lack of effective temperature display materials, and achieve the effect of rapid response of discoloration with temperature change and obvious color change

Active Publication Date: 2021-08-13
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the lack of effective temperature-indicating materials used to characterize the working temperature of devices in the prior art, the present invention provides a thermochromic amorphous aluminum nitride film and a preparation method thereof. The prepared aluminum nitride does not have a crystal structure and can be used in near It has thermochromic phenomenon at room temperature, which can effectively indicate the working temperature of the device

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  • A kind of Aln amorphous film and preparation method thereof
  • A kind of Aln amorphous film and preparation method thereof
  • A kind of Aln amorphous film and preparation method thereof

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preparation example Construction

[0036] The present invention also provides a method for preparing the above-mentioned AlN amorphous film, comprising the following steps;

[0037] Step 1: Clean and dry the surface of the monocrystalline silicon wafer;

[0038] Step 2: In a vacuum state, use magnetron sputtering reactive sputtering method in Ar gas and N 2 Sputter the Al target on the surface of the single crystal silicon wafer in the gas atmosphere;

[0039] Step 3: Vacuum cooling the monocrystalline silicon wafer obtained in Step 2 to obtain an AlN amorphous film.

[0040] The invention provides a method for preparing an AlN amorphous film. The prepared AlN amorphous film is in a disordered amorphous state, and its amorphous characteristics can be maintained at 300°C. Under the condition of maintaining its amorphous characteristics, the AlN amorphous The crystalline thin film shows thermochromic phenomenon that changes with temperature, and the discoloration temperature range is 70-100°C. During the heati...

Embodiment 1

[0043] A method for preparing an AlN amorphous film, comprising the following steps;

[0044] Step 1. Take the single-crystal silicon substrate polished on one side, ultrasonically clean it in chemically pure acetone and ethanol for 10 minutes, and then dry it quickly with warm air to make the surface clean and free of stains and dust. After ultrasonic treatment, The surface roughness of the silicon substrate is less than 0.8nm. Ultrasonic cleaning of the polished single crystal silicon substrate is beneficial to improve the bonding force between the film and the substrate.

[0045] Step 2: Fix the ultrasonically cleaned single-crystal silicon substrate on the substrate, and send it into the magnetron sputtering coating chamber with automatic machinery, and vacuumize until the vacuum degree of the background is 4.0×10 -4 Below Pa.

[0046]Step 3, using magnetron sputtering reactive sputtering technology to deposit and prepare AlN amorphous film on the single crystal silicon ...

Embodiment 2

[0051] A method for preparing an AlN amorphous film, comprising the following steps;

[0052] In step 1, the monocrystalline silicon substrate is ultrasonically cleaned in analytically pure acetone and ethanol for 10 minutes each, and then quickly dried with warm air.

[0053] Step 2, fix the dried monocrystalline silicon substrate on the substrate, and automatically send it into the magnetron sputtering vacuum coating chamber mechanically, and pump it until the vacuum degree of the background is 4.0×10 -4 Below Pa.

[0054] Step 3, using magnetron sputtering DC power supply, using Ar gas and N 2 Gas reactive sputtering, depositing AlN amorphous film on single crystal silicon wafer;

[0055] Among them, the purity of the Al target is 99.99wt%, the deposition pressure is 0.75Pa, the deposition gas flow is Ar gas 40sccm, N 2 The gas is 10 sccm, the deposition temperature is room temperature, and the rotation speed of the substrate is 15 r / min. After the air flow is stabilized...

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Abstract

The invention provides an AlN amorphous thin film and its preparation method. The AlN thin film is in a disordered amorphous state, and its amorphous characteristics can be maintained at 300°C. Under the condition of maintaining its amorphous characteristics, the AlN amorphous thin film shows There is a thermochromic phenomenon that changes with temperature, and the discoloration temperature range is 70‑100 °C. During the heating process, there is no crystallization or phase change in the film material, which is fundamentally different from the traditional thermochromic material that relies on phase change to produce color change. The AlN amorphous film does not rely on the crystal structure and the thermochromic mechanism of phase change. AlN The thermochromic temperature range of the amorphous film is close to room temperature, the color change is obvious before and after heating, and the color change responds quickly with temperature changes.

Description

technical field [0001] The invention belongs to the field of intelligent display materials, in particular to an AlN amorphous film and a preparation method thereof. Background technique [0002] With the development of modern science and technology, many mechanical, electronic or other devices are developing in the direction of miniaturization and precision. Small and micro devices have the characteristics of small feature size and complex internal structure, and have been widely used in aerospace, nuclear energy, telecommunications, medical and other fields. Although such small and micro devices are more efficient than traditional large devices, their thermal failures caused by local temperature changes are more difficult to detect during actual service, which brings great challenges to equipment detection and maintenance. difficulty. [0003] Therefore, it is necessary to develop an effective temperature-indicating material to characterize device operating temperature fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/02C23C14/06C23C14/35C23C14/50
CPCC23C14/0036C23C14/021C23C14/0641C23C14/35C23C14/505
Inventor 刘刚左家栋孙军王亚强张金钰吴凯
Owner XI AN JIAOTONG UNIV