Modulation method of asymmetric ferroelectric tunneling junction multi-value storage unit

A technology of multi-value storage and modulation method, which is applied in the direction of electrical components, information storage, static memory, etc., to achieve the effect of increasing unit storage capacity, fast speed, and increasing storage density

Active Publication Date: 2020-05-29
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, MFIM-based memory can only be applied to binary memory, and it is difficult to meet the higher requirements of the future society for information processing capability and information storage capacity.

Method used

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  • Modulation method of asymmetric ferroelectric tunneling junction multi-value storage unit
  • Modulation method of asymmetric ferroelectric tunneling junction multi-value storage unit
  • Modulation method of asymmetric ferroelectric tunneling junction multi-value storage unit

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preparation example Construction

[0075] The present invention provides a method for preparing the above-mentioned multi-valued storage unit of the asymmetric ferroelectric tunnel junction, the multi-valued storage unit includes the above-mentioned

[0076] The method includes the following steps:

[0077] Step 1: providing a substrate, and forming a first electrode layer 1 on the upper surface of the substrate;

[0078] Step 2: Form an asymmetric ferroelectric functional layer array 11 on the upper surface of the first electrode layer 1, which includes: N ferroelectric functional layers parallel to the first plane direction, two adjacent ferroelectric functional layers separated by an insulating layer;

[0079] Step 3: forming a second electrode layer 5 on the upper surface of the Nth ferroelectric functional layer;

[0080] Step 4: crystallizing the ferroelectric functional layer, so that the material of the ferroelectric functional layer exhibits ferroelectric properties;

[0081] In the present inventio...

Embodiment

[0106] This embodiment provides a Hf-based 0.5 Zr 0.5 o 2 (hereinafter abbreviated as HZO) ferroelectric thin film and Al 2 o 3 The multi-value storage unit of the asymmetric ferroelectric tunnel junction of the insulating layer, its structure schematic diagram is as follows figure 1 As shown, it mainly includes a first electrode layer 1 , a first ferroelectric functional layer 2 , an insulating layer 3 , a second ferroelectric functional layer 4 , and a second electrode layer 5 from bottom to top. Specific steps are as follows:

[0107] (1) Preparation of the first electrode layer 1

[0108] Step 1: Preparation of the first electrode layer 1: TiN is selected as the lower electrode 1 in the embodiment, and a layer of the lower electrode 1 is grown on a single crystal silicon substrate with SiO2 polished on one side by magnetron sputtering.

[0109] Step 1-1: Substrate cleaning: first use acetone to clean in an ultrasonic environment for 10 minutes, then use alcohol to cl...

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Abstract

The invention provides a modulation method of an asymmetric ferroelectric tunnel junction multi-value storage unit, a corresponding storage unit and a memory. The multi-value storage unit comprises Nferroelectric functional layers; the N ferroelectric functional layers have different coercive field values so that the N ferroelectric functional layers still show different residual polarization differences after first excitation is applied, and the multi-value storage unit shows 2N tunneling resistance states under action of second excitation; and the N is an integer greater than or equal to 2,and the first excitation comprises effects of changing a size of driving excitation anda direction of the driving excitation. The asymmetric ferroelectric tunnel junction multi-value storage unit hascharacteristics of non-volatility and low reading power consumption; and meanwhile, multiple different storage states can be realized in one storage unit so that astorage density and a unit storage capacity are greatly improved.

Description

technical field [0001] The invention belongs to the field of microelectronic devices, in particular to a modulation method of an asymmetric ferroelectric tunnel junction multi-valued storage unit and its corresponding storage unit and memory. Background technique [0002] With the advent of the big data era, the demand for information processing capabilities and information storage capacity continues to increase, and the traditional von Neumann computer architecture and memory are increasingly difficult to meet the demand. Ferroelectric materials are used in the storage field due to their inherent advantages such as fast erasing and writing speed, ultra-low power consumption, high cycle times, and non-volatile polarization states. New types of non-volatile materials such as FRAM, FeFET, and FTJ based on ferroelectric materials Sexual memory has received a lot of attention. Among them, the FTJ memory modulates the barrier height of the insulating layer interface through the ...

Claims

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Application Information

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IPC IPC(8): H01L27/1159G11C11/22G11C11/56
CPCG11C11/22G11C11/5657H10B51/30
Inventor 王兴晟余豪王成旭缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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