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Terahertz adjustable wave absorber based on Dirac semimetal

A semi-metal and terahertz technology, which is applied in the field of terahertz metamaterial wave absorption, can solve the problems of undeveloped applications of Dirac semi-metal, and achieve the effects of easy large-scale integration, good absorption effect and simple structure.

Inactive Publication Date: 2020-06-09
GUILIN UNIV OF ELECTRONIC TECH
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Problems solved by technology

Applications of Dirac semimetals in absorbers have been largely unexplored so far

Method used

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  • Terahertz adjustable wave absorber based on Dirac semimetal
  • Terahertz adjustable wave absorber based on Dirac semimetal
  • Terahertz adjustable wave absorber based on Dirac semimetal

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specific Embodiment approach

[0026] The present invention designs a terahertz tunable absorber based on Dirac semimetal, and the specific implementation method includes:

[0027] figure 1 It is a schematic diagram of the unit structure based on the Dirac semi-metal absorber. The metal layer 3 with a period of P and a thickness of t1 is used as the reflective substrate, the dielectric constant of the intermediate dielectric layer 2 is set to 3.5, the horizontal period and the vertical period of the top Dirac semi-metal layer 1 are both set to P, and the circular Dirac The radius of the half-metal structure is R, and its thickness is 20 nm. The metal layer can be a good conductor such as gold or silver, where the thickness of the metal should be much greater than its skin depth of 100 nm in the terahertz band, so the present invention chooses 0.2 μm as its thickness.

[0028] What the present invention designs is a reflective wave absorber at 2-4THz, and the selected period p is 4.3 μm.

[0029] figure...

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Abstract

The invention discloses a terahertz adjustable wave absorber based on Dirac semimetal, which belongs to the field of terahertz metamaterial wave absorption, and realizes perfect absorption in a terahertz frequency band. The wave absorber is characterized in that the wave absorber unit sequentially comprises a layer of all-metal film (1), a layer of dielectric film (2) and a patterned Dirac semimetal layer (3) at the top sequentially from bottom to top, and the three layers of structures are attached to one another. The metal film layer adopts gold or silver conductors and the like, and the intermediate dielectric layer adopts a low dielectric constant material. Through time domain finite difference method simulation calculation, the reflection spectrum of the structure is observed, and perfect absorption in the terahertz frequency band is achieved. The metasurface wave absorber has the advantages of being strong in absorption, insensitive to polarization, simple in structure, convenient to machine and the like, due to the fact that the Fermi level of Dirac semimetal is adjustable, the performance that the resonant frequency of the wave absorber can be dynamically adjusted can be achieved, and the requirement for application in the terahertz absorption aspect can be met.

Description

[0001] (1) Technical field [0002] The invention designs a terahertz adjustable wave absorber based on a Dirac semimetal, and belongs to the field of terahertz metamaterial wave absorption. The structure of the absorber can realize perfect absorbing in the terahertz frequency band, adjustable absorbing frequency band, polarization insensitivity and other characteristics, and can be used in terahertz band light source, sensor design and other aspects. [0003] (2) Background technology [0004] In recent years, two-dimensional materials with atomic-scale thickness, such as graphene, have been widely used in tunable metasurface devices due to their gate voltage dependence. In the article "Mid-Infrared Tunable Dual-Frequency CrossPolarization Converters Using Graphene-Based L-Shaped Nanoslot Array", the metasurface structure based on L-shaped graphene was studied and the frequency tunable cross polarization was realized, proving that with the Fermi energy As the level increases,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q17/00G02B5/00
CPCG02B5/003H01Q17/008
Inventor 陈明陈晨刘厚权王崇云赵德平高文文张文波苑立波
Owner GUILIN UNIV OF ELECTRONIC TECH
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