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Method for preparing iodine-nitrogen double-doped graphene based on one-step hydrothermal method

A double-doping, graphene technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of difficult control, high energy consumption, complicated experimental process, etc., achieve high repetition rate, low energy consumption, Source-rich effects

Active Publication Date: 2020-06-16
HENAN INST OF ENG
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the method of synthesizing iodine-nitrogen double-doped graphene is mainly based on the thermal reduction of graphene oxide, two-step high-temperature thermal annealing synthesis method, this method not only consumes high energy, but also the experimental process is complicated and difficult to control

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  • Method for preparing iodine-nitrogen double-doped graphene based on one-step hydrothermal method
  • Method for preparing iodine-nitrogen double-doped graphene based on one-step hydrothermal method
  • Method for preparing iodine-nitrogen double-doped graphene based on one-step hydrothermal method

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Embodiment 1

[0026] A method for preparing iodine nitrogen double-doped graphene based on a one-step hydrothermal method, the steps are as follows:

[0027] Firstly, the graphene oxide dispersion was prepared by the improved Hummer's method, and 80 mL of the graphene oxide dispersion with a concentration of 1 mg / mL was placed in a beaker, and 0.01 mol of urea and 0.01 mol of potassium iodide were added respectively, and after fully stirring for 1 h, the beaker was placed on Ultrasonic treatment in an ultrasonic cleaner for 30 minutes, with an ultrasonic power of 200W, then transfer the mixed solution in the beaker to a hydrothermal reaction kettle, place it in an oven, and heat it at 180°C for 18 hours, take out the hydrothermal product, and wash it with deionized water Suction filtration and washing until neutral, the washed product was placed in a freeze dryer, and freeze-dried at -60°C for 12 hours to obtain iodine nitrogen double-doped graphene.

[0028] attached figure 1 In order to ...

Embodiment 2

[0034] A method for preparing iodine nitrogen double-doped graphene based on a one-step hydrothermal method, the steps are as follows:

[0035] Firstly, the graphene oxide dispersion was prepared by the improved Hummer's method. 80 mL of the graphene oxide dispersion with a concentration of 5 mg / mL was placed in a beaker, and 0.01 mol of urea and 0.05 mol of potassium iodide were added respectively. After fully stirring for 2 h, the beaker was placed on Ultrasonic treatment in an ultrasonic cleaner for 60 minutes, with an ultrasonic power of 300W, then transfer the mixed solution in the beaker to a hydrothermal reaction kettle, and place it in an oven, and heat it at 180°C for 24 hours, take out the hydrothermal product, and wash it with deionized water After suction filtration and washing until neutral, the washed product was placed in a freeze dryer and freeze-dried at -70°C for 24 hours to obtain iodine-nitrogen double-doped graphene.

Embodiment 3

[0037] A method for preparing iodine nitrogen double-doped graphene based on a one-step hydrothermal method, the steps are as follows:

[0038]Firstly, the graphene oxide dispersion was prepared by the modified Hummer's method, and 80 mL of the graphene oxide dispersion with a concentration of 1 mg / mL was placed in a beaker, and 0.01 mol of urea and 0.03 mol of potassium iodide were added respectively, and after fully stirring for 1 h, the beaker was placed on Ultrasonic treatment in an ultrasonic cleaner for 30 minutes, with an ultrasonic power of 100W, then transfer the mixed solution in the beaker to a hydrothermal reaction kettle, place it in an oven, and heat it at 150°C for 18 hours, take out the hydrothermal product, and wash it with deionized water After suction filtration and washing until neutral, the washed product was placed in a freeze dryer and freeze-dried at -50°C for 12 hours to obtain iodine-nitrogen double-doped graphene.

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Abstract

The invention relates to a preparation method of iodine-nitrogen double-doped graphene, in particular to a method for preparing iodine-nitrogen double-doped graphene based on a one-step hydrothermal method. The preparation method comprises the following specific steps: firstly, preparing graphene oxide by adopting an improved Hummer's method, then uniformly mixing the graphene oxide with an iodinesource and a nitrogen source through stirring and ultrasonic treatment, then carrying out hydrothermal reaction, and filtering, washing and freeze-drying a hydrothermal product, so as to obtain the iodine-nitrogen double-doped graphene material. The method has the advantages of simplicity in operation, low cost, low energy consumption, high repetition rate, easiness in process control and the like, can easily realize large-scale industrial production, and has important practical value and a good development prospect.

Description

technical field [0001] The invention relates to the field of graphene preparation, in particular to a method for preparing iodine-nitrogen double-doped graphene based on a one-step hydrothermal method. Background technique [0002] Graphene (graphene) is made of sp 2 A two-dimensional nanomaterial with a honeycomb hexagonal lattice structure composed of hybrid atoms. The unique structure makes it have excellent thermal, mechanical, and electrical properties. With the deepening of research, researchers have not only focused on the functional research of graphene itself, but paid more attention to the practical application in devices. Pure graphene has insufficient active sites, is not selective, and does not have a good match in practical applications. Moreover, the catalytic activity of graphene-based materials in the oxidation-reduction reaction (ORR) in acidic media is low, which is not enough to replace noble metals as electrocatalysts. In order to make up for the defe...

Claims

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Application Information

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IPC IPC(8): C01B32/184C01B32/194
CPCC01B32/184C01B32/194Y02E60/10
Inventor 陈锋马路路马梦娟王鸿举宋志敏李冰任建刚谷保祥张军蕊
Owner HENAN INST OF ENG
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