Preparation method of C/SiC composite material
A composite material and prefabricated technology, applied in the field of ceramic matrix composite materials, can solve the problems of high-performance C/SiC composite materials such as long-term engineering application, low mechanical properties, and complicated preparation process, and achieve easy large-scale industrial application, excellent Mechanical properties, the effect of simple preparation method
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Embodiment 1
[0024] The preparation process of C / SiC composites includes the following steps:
[0025] 1. Weave plain cloth with M40J carbon fiber, and control the fiber volume fraction at 40%, then lay and laminate the plain cloth into a prefabricated body with a 2D structure, and press it with a graphite mold to complete the shape;
[0026] 2. Put the preform into the chemical vapor deposition equipment, the deposition temperature is 600°C, the deposition equipment is evacuated to 20kPa, the flow rate of the dilution gas argon is 80L / min, the flow rate of the carbon source precursor gas propylene is 200L / min, and the deposition 30h, the thickness of the obtained pyrolytic carbon interface layer is 550 μm;
[0027] 3. Then put it into the CVI deposition equipment, set the deposition temperature to 1200°C, vacuum the deposition equipment to 20kPa, the flow rate of the carrier gas hydrogen is 70L / min, and the flow rate of the SiC matrix precursor gas trichloromethylsilane is 200L / min. min,...
Embodiment 2
[0032] 1. Weave plain cloth with M55J carbon fiber, control the fiber volume fraction at 45%, then lay the plain cloth into a prefabricated body with a 2D structure, and press it with a graphite mold to complete the shape;
[0033]2. Put the preform into the chemical vapor deposition equipment, the deposition temperature is 700°C, the deposition equipment is evacuated to 40kPa, the flow rate of the dilution gas argon is 70L / min, and the flow rate of the carbon source precursor gas propylene is 300L / min. 40h, the thickness of the pyrolytic carbon interface layer is 600 μm;
[0034] 3. Then put it into the CVI deposition equipment, set the deposition temperature to 1200°C, vacuum the deposition equipment to 50kPa, the flow rate of the carrier gas hydrogen is 65L / min, and the flow rate of the SiC matrix precursor gas trichloromethylsilane is 300L / min. min, single deposition time is 100h, multiple cycles of deposition, the density is greater than 1.4g / cm 3 C / SiC blank material; ...
Embodiment 3
[0039] 1. Weave plain cloth with M60J carbon fiber, control the fiber volume fraction at 50%, then lay the plain cloth into a prefabricated body with a 2D structure, press it with a graphite mold, and complete the shape;
[0040] 2. Put the preform into the chemical vapor deposition equipment, the deposition temperature is 700°C, the deposition equipment is evacuated to 50kPa, the flow rate of the dilution gas argon is 80L / min, the flow rate of the carbon source precursor gas propylene is 500L / min, and the deposition 50h, the thickness of the pyrolytic carbon interface layer is 700 μm;
[0041] 3. Then put it into the CVI deposition equipment, set the deposition temperature to 1300°C, vacuum the deposition equipment to 40kPa, the flow rate of the carrier gas hydrogen is 70L / min, and the flow rate of the SiC matrix precursor gas trichloromethylsilane is 500L / min. min, single deposition time is 100h, multiple cycles of deposition, the density is greater than 1.4g / cm 3 C / SiC bla...
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