Infrared germanium carbide film, infrared material with germanium carbide film, preparation method and application of germanium carbide film
A technology of infrared material and germanium carbide film, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of large infrared absorption and uneven distribution of film components, and achieve small infrared absorption, The effect of uniform distribution of film composition and small stress
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[0043] A kind of preparation method of germanium carbide film that the present invention proposes, comprises the following steps:
[0044] 1) The infrared germanium material and the graphite material are uniformly mixed at an atomic ratio of 1:99 to 99:1, and sintered at 300°C to 2000°C and 0.1 ton to 2,000 tons;
[0045] 2) placing the material obtained in step 1) as a sputtering target in a sputtering environment, and removing impurities on the surface of the infrared substrate;
[0046]3) Put the infrared substrate obtained in step 2) into a sputtering environment, and then deposit the material obtained in step 1) on the surface of the infrared substrate.
[0047] The aforementioned sputtering may be magnetron sputtering or ion beam sputtering.
[0048] In the above step 1), the particle size range of the infrared germanium material and graphite material can be 0.001 μm to 5000 μm, and the atomic ratio range of the infrared germanium material and graphite material can be (...
Embodiment 1
[0069] This embodiment provides a method for preparing a germanium carbide film, comprising the following steps:
[0070] 1) Weigh the infrared germanium material and the graphite material according to the atomic ratio of 50:50, then put the two materials into a ball mill and grind them into powders with an average particle size of 30 μm, and mix them uniformly at the same time, and put the uniformly mixed germanium-graphite powder in the Sintering at 700°C and 100 tons of high pressure (high temperature and high pressure sintering furnace) to obtain a germanium-graphite hot-pressed sintered round cake with a size of Ф60mm×5mm;
[0071] 2) Put the hot-pressed sintered round cake obtained in step 1) as a sputtering target into the magnetron sputtering target as a sputtering target, and select a size of IRG206 chalcogenide glass, wipe it with a dust-free cloth dripped with a mixture of absolute ethanol and ether (the volume ratio of the two is 3:1);
[0072] 3) Put the cleaned...
Embodiment 2
[0074] The difference between this example and Example 1 is that 1) the infrared germanium material and the graphite material are weighed according to the atomic ratio of 45:55, and then the two materials are put into a ball mill to be ground into a powder with an average particle size of 20 μm. Mixing, sintering the uniformly mixed germanium-graphite powder at 500°C and 20 tons of high pressure (high temperature and high pressure sintering furnace) to obtain a germanium-graphite hot-pressed sintered round cake with a size of Ф60mm×5mm; 2) Change the sputtering power to For 200W, deposit a germanium carbide film on IRG206 chalcogenide glass, and the rest of the steps are the same.
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Abstract
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