Lining assembly and reaction chamber

Abstract

The invention provides a lining assembly and a reaction chamber. The lining assembly comprises a lining and a plurality of adjusting units, the lining is used for surrounding the inner side of a sidewall of the reaction chamber, the lining comprises a plurality of sub-linings in one-to-one correspondence with the adjusting units, the sub-linings are arranged at intervals in the circumferential direction, the first end of each adjusting unit is connected with the corresponding sub-lining, and the second end of each adjusting unit is used for being grounded; and capacitance values of the plurality of adjusting units are set to enable capacitive reactance of the plurality of sub-liners to be equal. By arranging the adjusting unit, the capacitive reactance of the plurality of sub-linings is equal, and then the currents flowing through the sub-linings are equal, so that the plasma densities in the angles corresponding to the sub-linings are the same, and the angular uniformity of the plasmas is improved. Moreover, the lining assembly provided by the invention is simple in structure and easy to control, and the production cost of products is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a lining component and a reaction chamber. Background technique [0002] Inductively coupled plasma (ICP) is a commonly used plasma source for dry etching and thin film deposition in the semiconductor field. ICP applies high-frequency current to the surface of the coil to generate an alternating high-frequency electromagnetic field to excite the gas to generate plasma, and the coil and the discharge gas are separated by a dielectric window. When ICP is applied to the etching process, in order to improve the maintenance convenience of the chamber and prevent the corrosion of chamber materials, a lining structure is usually used. The lining needs to be grounded to ensure that the ICP electrodes and bias electrodes have Stable reference electrode. However, because the inner lining needs to have holes or grooves to meet the needs of observation, film...

AI Technical Summary

Problems solved by technology

However, because the inner lining needs to have holes or grooves to meet the needs of observation, film transfer and pumping, the distribution of plasma current on the surface of the inner lining is uneven, and the uneven plasma current will affect the plasma density in the base. The uniformity of the radial distribution of the slices, which in turn leads to problems such as eccentricity of the etching results

[0003] In order to solve the problem of uneven distribution of plasma, such as figure 1 As shown, the prior art provides a dual-output coil design, which realizes the uniformity of plasma distribution on the wafer surface by controlling the shape of the coil and the current ratio of the inner and outer rings.

Although the existing technology can solve the problem of plasma distribution eccentricity, it has high requirements for coil structure distribution and matching current ratio control, which leads to complex structure and high product cost

Images