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A kind of synthetic method of selenium cadmium sulfide polycrystal

A technology of selenium cadmium sulfide and synthesis method, which is applied in chemical instruments and methods, polycrystalline material growth, single crystal growth and other directions, can solve the problems of single chemical structure, explosion in the cooling process, etc., and achieves a simple synthesis process, easy operation, and convenience. The effect of promotion

Active Publication Date: 2022-01-25
SICHUAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the deficiencies in the prior art, provide a kind of synthesis method of cadmium selenium sulfide polycrystal, to greatly improve the single synthesis amount of cadmium selenium sulfide polycrystal, obtain the cadmium selenium sulfide with single chemical structure without miscellaneous peaks Polycrystalline, meeting the needs of selenium cadmium sulfide single crystal growth, and solving the safety hazard of explosion during the synthesis process and during the cooling process after the synthesis

Method used

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  • A kind of synthetic method of selenium cadmium sulfide polycrystal
  • A kind of synthetic method of selenium cadmium sulfide polycrystal
  • A kind of synthetic method of selenium cadmium sulfide polycrystal

Examples

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Effect test

Embodiment 1

[0044] Synthesis Example of the present embodiment CdS 0.2 SE 0.8 Polycrystalline molar ratio in high purity as a raw material CdS and CdSe, CdS and CdSe is 8: 2, CdSe 50.26795g mass measurement, i.e. 0.26269mol, CdSe and CdS molar ratio of 8: 2 is calculated, should CdS 0.06567mol (mass 9.48767g), the actual weighed CdS 9.48970g (0.06568mol), the total number of moles of 0.32836 CdS and CdSe, CdS added increased 0.1% CdSe and CdS total number of moles 0.06567mol basis, i.e., increase 0.00033mol (quality 0.04767g, actually weighed 0.04780g);

[0045] The following process steps:

[0046] (1) Cleaning and drying of the synthesis vessel

[0047] Synthesis of the inner container is an outer quartz tube and the quartz tube 1 2 double quartz ampoule compositions, such as figure 1 , The first tube 1 by cleaning a quartz tap water, and then HF, HNO 3 Cleaning solution (HF, HNO composition and tap water 3 , Water volume ratio is 2: 1: 5) was injected into a quartz tube 1 soak for 5 minute...

Embodiment 2

[0056] Synthesis Example of the present embodiment CdS 0.4 SE 0.6 Polycrystalline, the molar ratio of the high purity material as CdS and CdSe, CdS and CdSe is 6: 4, CdSe 39.71366g mass measurement, i.e. 0.20753mol, CdSe and CdS molar ratio of 6: 4 calculated, should CdS is 0.13835mol (mass 19.98812g), the actual measurement 19.99020g (0.13836mol), the total number of moles of .34588 CdS and CdSe, CdS added in an amount of 0.2% CdSe and increase the total number of moles of CdS 0.13835mol basis, i.e., increase 0.00069mol (quality 0.09969g, actually weighed 0.09902g);

[0057] The following process steps:

[0058] (1) Cleaning and drying of the synthesis vessel

[0059] Same as in Example 1;

[0060] (2) loading and sealing the junction

[0061] Same as in Example 1;

[0062] (3) Synthesis of

[0063] ① synthesis rotatable and tiltable in two district heating tube furnace, the two regions close to the end of the heating furnace tube of the furnace to a first port Ⅰ zone, the other ...

Embodiment 3

[0068] Synthesis Example of the present embodiment CdS 0.5 SE 0.5Multi-crystals, with high purity CDSE and CDS as raw materials, CDSE and CDS molar ratio of 5: 5, CDSE is measured by mass 34.17711g, namely 0.17860 mol, calculated according to CDSE and CDS, CDS should be calculated. It was 0.17860 mol (mass 25.80323 g), the actual weighing 25.80703 g (0.17863mol), the total molar number of CDSE and CDs was 0.35720, and the amount of CDS added to increase the total number of CDSE and CDS on the basis of 0.17860 mol. Increase 0.00089 mol (0.12858g of mass, 0.12721G);

[0069] Process steps are as follows:

[0070] (1) Cleaning and drying of synthetic containers

[0071] Similarly to Example 1;

[0072] (2) Feed and closed

[0073] Similarly to Example 1;

[0074] (3) Synthesis

[0075] 1 Synthesis in two regions heating tube furnaces that can inclined and rotate, the two-region heating tube furnace is close to one end of the furnace to the first temperature zone I, and the other end ...

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Abstract

A kind of synthetic method of selenium cadmium sulfide polycrystal, described selenium cadmium sulfide polycrystal is CdS x Se 1‑x Polycrystalline or Cr:CdS x Se 1‑x Polycrystalline, Synthetic CdS x Se 1‑x When polycrystalline, use high-purity CdSe and CdS as raw materials to synthesize Cr:CdS x Se 1‑x When polycrystalline, high-purity CdSe, CdS and CrSe are used as raw materials. The process steps: (1) cleaning and drying of the synthesis container, (2) loading and sealing, (3) synthesis, the synthesis container is a double-layer quartz ampoule , the synthesis is carried out in a tiltable and rotatable two-zone heating tube furnace, using a combination of dual-temperature zone gas-phase synthesis and temperature oscillation. After the synthesis is completed, the synthesis furnace is tilted so that the synthesis product in the synthesis container is located at the lower end of the synthesis container. The temperature is lowered, and the temperature at the upper end of the synthesis container is controlled to be higher than the temperature at the lower end of the synthesis container during the cooling process. The above method can greatly increase the single synthesis amount of the cadmium selenium sulfide polycrystal, and obtain the cadmium selenium sulfide polycrystal with a single chemical structure and no impurity peaks.

Description

Technical field [0001] The present invention belongs to the semiconductor material preparation of the three-dimensional solid solution structure, and more particularly to selenium-cycloprium-polycrystallions as a single crystal growth raw material (CDS) x SE 1-x Or CR: CDS x SE 1-x Synthesis method of polycrystalline). Background technique [0002] China's infrared laser light source has a wide and significant application prospects in military infrared confrontation, laser guidance, laser communications and laser medicine. CR 2+ Doped II-VI semiconductor material CDS and CDSE single crystal is an important 2.3 ~ 3.3 μm near - medium infrared solid laser material, is one of the most effective ways to achieve high power, large energy, wide-tuning. The semiconductor material of the solid-dissolved structure is formed by forming a solid solution structure, and a higher thermal conductivity, a wider armor, more efficient novel - medium infrared laser crystals, so that the transition m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/14C30B29/48
CPCC30B28/14C30B29/48
Inventor 黄巍何知宇陈宝军赵北君朱世富伍俊
Owner SICHUAN UNIV