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A 1.55μm Band Q-switched Pulse Laser

A laser and waveband technology, applied in lasers, laser parts, phonon exciters, etc., can solve the problems of increasing device cost and volume, increasing laser cavity loss, etc., and achieve the effect of simple structure

Active Publication Date: 2021-08-10
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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Problems solved by technology

[0003] At present, the technical solution for obtaining passive Q-switched pulsed lasers in the 1.55 μm band based on Erbium-Ytterbium co-doped crystals is mainly to add saturable absorbing materials in the resonant cavity of the laser as passive Q-switched devices, such as Co 2+ :MgAl 2 o 4 Crystal, Co 2+ : ZnSe crystal, Cr 2+ : ZnSe crystals and two-dimensional materials graphene and black phosphorus, etc., but the setting of these saturable absorbing materials not only increases the loss of the laser cavity, but also increases the cost and volume of the device

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  • A 1.55μm Band Q-switched Pulse Laser

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specific Embodiment

[0028] The embodiment of the present invention also provides two specific embodiments, including:

[0029] Diode Laser Pumping Er:Yb:Lu at 976nm Wavelength 2 Si 2 o 7 The crystal realizes 1545nm self-Q-switching pulse laser output. The specific implementation method is: a fiber-coupled semiconductor laser with a wavelength of 976nm, an optical coupler composed of two convex lenses 5 and 6, an input mirror 2, Er:Yb:Lu are arranged in sequence along the optical path 2 Si 2 o 7 Crystal and output mirror4. The pump beam output by the semiconductor laser is focused to Er:Yb:Lu after passing through the lens group 2 Si 2 o 7 In the crystal, the pump light beam waist spot diameter in the crystal is 200 μm. The input mirror 2 is a plane mirror, the transmittance T=90% at the wavelength of 976nm, the reflectivity R>99.8% at the wavelength of 1545nm, the output mirror 4 is a plane mirror, the transmittance T=3% at the wavelength of 1545nm, and the cavity length is about is 16m...

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Abstract

The invention discloses a 1.55 μm waveband Q-switched pulse laser, which belongs to the field of solid-state laser devices, and can effectively simplify the structure of the existing 1.55μm waveband passive Q-switched laser and reduce the device fabrication cost. The laser comprises: a pump source, an input mirror, a laser crystal and an output mirror sequentially arranged on the output optical path of the pump source; the pump source can generate laser light in the 0.98 μm or 0.94 μm waveband; the laser crystal is erbium-ytterbium co-doped silicon salt crystals. The invention is used for generating 1.55μm waveband pulse laser with adjustable Q.

Description

technical field [0001] The invention relates to a 1.55 μm band Q-switched pulse laser, which belongs to the field of solid-state laser devices. Background technique [0002] The 1.55μm band laser is safe for human eyes, and it is located in a good atmospheric transmission window, and has a strong ability to penetrate smoke and fog. In addition, this band of laser light also corresponds to the detection sensitive area of ​​Ge and InGaAs detectors working at room temperature, which can realize signal detection and collection without cryogenic refrigeration. Based on the above-mentioned advantages of the 1.55 μm band laser, the Q-switched pulse all-solid-state laser in the 1.55 μm band also has important application value in many fields such as lidar, laser ranging, three-dimensional imaging, and target recognition. [0003] At present, the technical solution for obtaining passive Q-switched pulsed lasers in the 1.55 μm band based on Erbium-Ytterbium co-doped crystals is mainl...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/16H01S3/11H01S3/0941
CPCH01S3/0941H01S3/11H01S3/1608H01S3/1618H01S3/1655
Inventor 陈雨金黄艺东黄建华林炎富龚兴红罗遵度
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI