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Chemical mechanical polishing solution

A chemical mechanical and polishing fluid technology, applied in the direction of polishing compositions containing abrasives, etc., can solve the problems of destroying colloidal stability, not being able to concentrate at a high rate, and inhibiting the rate of tungsten polishing

Active Publication Date: 2020-07-07
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, organophosphates usually destabilize colloids and cannot be concentrated at high concentrations
At the same time, increasing the amount of organic phosphoric acid will significantly inhibit the polishing rate of tungsten

Method used

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Embodiment Construction

[0024] The advantages of the present invention are further described below through specific examples, but the protection scope of the present invention is not limited only to the following examples.

[0025] Table 1 shows the components and contents of the polishing solutions of Examples 1-11 of the present invention and Comparative Examples 1-3. Prepare the chemical mechanical polishing solution according to the formula in the table, mix well, adjust the pH value to 2.0-2.5 with nitric acid or KOH, add 2.5% hydrogen peroxide before use, and make up the mass percentage to 100% with water to obtain various embodiments of the present invention and comparative example.

[0026] In Table 1, abrasive particle A is a conventional silica abrasive particle, which is PL-3 silica sol from FUSO Company, abrasive particle B is PL-3C silica sol from FUSO Company, and its surface is positively charged, and abrasive particle C is a Propyltriethoxysilane treated silica abrasive grit with a p...

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Abstract

The invention provides a chemical mechanical polishing solution, which comprises silicon dioxide grinding particles, ferric nitrate and organic acid; the surfaces of the silicon dioxide grinding particles carry positive charges. Compared with a polishing solution containing organic phosphonic acid, the chemical mechanical polishing solution provided by the invention is high in colloid stability. Besides, the silicon nitride polishing rate inhibitor is added into the polishing solution, so that the polishing rate of silicon nitride is properly inhibited on the premise of higher tungsten polishing rate, and the polishing requirement in semiconductor production is met.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid for polishing tungsten. Background technique [0002] Chemical mechanical polishing (CMP) is a technique for planarization by chemical action, mechanical action, or a combination of these two actions; it usually consists of a grinding table with a polishing pad, and a grinding head for carrying the chip composition. The grinding head fixes the chip, and then presses the front of the chip on the polishing pad. When performing chemical mechanical polishing, the grinding head moves linearly on the polishing pad or rotates in the same direction as the grinding table; at the same time, it contains the grinding The slurry of the agent is dripped onto the polishing pad and spreads on the polishing pad due to centrifugal action. The chip surface is globally planarized under the dual action of mechanics and chemistry. [0003] Metal tu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 何华锋王晨李星孙金涛史经深
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD