Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A chemical mechanical polishing fluid

A chemical mechanical and polishing liquid technology, applied in the direction of polishing composition containing abrasives, etc., can solve the problems of increasing organic phosphoric acid, not being able to concentrate at a high rate, and inhibiting the polishing rate of tungsten, so as to achieve high colloidal stability and meet the requirements of polishing Effect

Active Publication Date: 2022-05-13
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
View PDF21 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, organophosphates usually destabilize colloids and cannot be concentrated at high concentrations
At the same time, increasing the amount of organic phosphoric acid will significantly inhibit the polishing rate of tungsten

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A chemical mechanical polishing fluid
  • A chemical mechanical polishing fluid
  • A chemical mechanical polishing fluid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The advantages of the present invention are further described below through specific examples, but the protection scope of the present invention is not limited only to the following examples.

[0025] Table 1 shows the components and contents of the polishing solutions of Examples 1-11 of the present invention and Comparative Examples 1-3. Prepare the chemical mechanical polishing solution according to the formula in the table, mix well, adjust the pH value to 2.0-2.5 with nitric acid or KOH, add 2.5% hydrogen peroxide before use, and make up the mass percentage to 100% with water to obtain various embodiments of the present invention and comparative example.

[0026] In Table 1, abrasive particle A is a conventional silica abrasive particle, which is PL-3 silica sol from FUSO Company, abrasive particle B is PL-3C silica sol from FUSO Company, and its surface is positively charged, and abrasive particle C is a Propyltriethoxysilane treated silica abrasive grit with a p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a chemical mechanical polishing fluid, which comprises silicon dioxide abrasive grains, ferric nitrate and organic acid, and the surface of the silicon dioxide abrasive grains is positively charged. The chemical mechanical polishing liquid of the present invention has higher colloidal stability than the polishing liquid containing organic phosphonic acid. In addition, the silicon nitride polishing rate inhibitor is added to the polishing liquid of the present invention, and on the premise of having a relatively high tungsten polishing rate, the polishing rate of silicon nitride is properly suppressed, which meets the polishing requirements in semiconductor production.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid for polishing tungsten. Background technique [0002] Chemical mechanical polishing (CMP) is a technique for planarization by chemical action, mechanical action, or a combination of these two actions; it usually consists of a grinding table with a polishing pad, and a grinding head for carrying the chip composition. The grinding head fixes the chip, and then presses the front of the chip on the polishing pad. When performing chemical mechanical polishing, the grinding head moves linearly on the polishing pad or rotates in the same direction as the grinding table; at the same time, it contains the grinding The slurry of the agent is dripped onto the polishing pad and spreads on the polishing pad due to centrifugal action. The chip surface is globally planarized under the dual action of mechanics and chemistry. [0003] Metal tu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 何华锋王晨李星孙金涛史经深
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com