Efficient three-dimensional sulfide end face coupler applied to communication waveband and preparation method thereof

An end-face coupling and sulfide technology, which is used in the coupling of optical waveguides, instruments, optical waveguides and light guides, etc., can solve the problems of large mode field mismatch loss, high insertion loss of on-chip devices, and low theoretical coupling efficiency, so as to avoid indirect Insertion loss, low insertion loss, solve the effect of low coupling efficiency

Inactive Publication Date: 2020-07-17
SUN YAT SEN UNIV
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, its mode field size is very small compared to the input and output fibers, and directly aligning the two will cause a large mode field mismatch loss. Therefore, the problem of high insertion loss of on-chip devices has always been a problem.
The end-face coupler has a traditional on-chip end-face coupling device, because only the width of the waveguide is adjusted, the adjustable parameter is small, and the theoretical coupling efficiency is low (currently 50%-60%)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Efficient three-dimensional sulfide end face coupler applied to communication waveband and preparation method thereof
  • Efficient three-dimensional sulfide end face coupler applied to communication waveband and preparation method thereof
  • Efficient three-dimensional sulfide end face coupler applied to communication waveband and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] combine Figure 5 and Figure 6 To illustrate this embodiment, germanium, arsenic and sulfur compounds are selected as the material for the core 3 of the end-face coupler, and the refractive index of the germanium, arsenic and sulfur compounds in the 1550 nm band can be made to be 2.3029 through compound composition design. The design of the size of the narrow end of the fiber core 3 can effectively amplify the waveguide mode field to match the input light field. The size of the wide end of the coupler core 3 is suitable for dispersion control of nonlinear devices in the 1550nm communication band. The upper cladding layer 4 and the lower cladding layer 2 are silicon dioxide, and the refractive index at a wavelength of 1550 nm is 1.444. The height of the upper cladding layer 4 can at least be embedded in the core 3 layers, and the height of the lower cladding layer 2 is 3 μm.

[0032] The width of the narrow end of the core 3 of the sulfide end-face coupler is 150nm-4...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
heightaaaaaaaaaa
widthaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of semiconductors, and relates to an efficient three-dimensional sulfide end face coupler applied to a communication waveband and a preparation method thereof. The end face coupler sequentially comprises a substrate, a lower cladding, a fiber core and an upper cladding from bottom to top. The fiber core is of a three-dimensional inverted-cone-shaped structure, and the width value and the height value of the fiber core are gradually increased from the end face of one end of the coupler to the end face of the other end of the coupler in the light beampropagation direction. The cross section size of the coupler fiber core is changed simultaneously in the light propagation direction in height and width, the mode size of the waveguide can be amplified simultaneously in the transverse direction and the longitudinal direction, high-efficiency coupling of spatial light and a chip is achieved, and the problem that a traditional end face coupler is low in coupling efficiency is effectively solved. According to the invention, Sulfide is selected as a coupler fiber core material, so introduction of indirect insertion loss can be avoided, the characteristics of low insertion loss, compact structure, polarization insensitivity and the like are achieved, and application and popularization in the fields of semiconductor integrated optoelectronics,all-optical signal processing and the like are facilitated.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and more specifically relates to a high-efficiency three-dimensional sulfide end-face coupler applied to communication bands and a preparation method thereof. Background technique [0002] At present, with the explosive growth of people's demand for information, the increasing amount of information transmission and transmission rate make the traditional photoelectric communication mode consume more and more power. On-chip integrated devices have significant advantages such as high integration, small size, low power consumption, fast transmission rate, low noise, and high reliability. They have important potential applications in the field of communication and other fields, and are an optimal solution to the development bottleneck of traditional communication devices. . [0003] However, the size of waveguides in on-chip devices in communication bands is generally on the order of sub-micro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/122G02B6/12G02B6/136G02B6/132G02B6/27
CPCG02B6/12G02B6/1228G02B6/132G02B6/136G02B6/2793G02B2006/12035G02B2006/12038G02B2006/1205G02B2006/12061
Inventor 张斌孙耀东李朝晖曾平羊夏迪杨泽林宋景翠朱莺
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products