Three-phase four-bridge-arm inverter based on SiC MOSFET

A technology of three-phase four-leg and inverter, which is applied in the direction of output power conversion device, conversion of AC power input to DC power output, high-efficiency power electronic conversion, etc. Problems such as low inverter output power and poor reliability

Pending Publication Date: 2020-07-17
河北汉莎自动化设备科技有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] Existing inverters based on silicon-based power semiconductor devices have disadvantages such as low power density, large inverter

Method used

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  • Three-phase four-bridge-arm inverter based on SiC MOSFET
  • Three-phase four-bridge-arm inverter based on SiC MOSFET
  • Three-phase four-bridge-arm inverter based on SiC MOSFET

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Embodiment Construction

[0025] Embodiments of the present disclosure will be described in detail below in conjunction with the accompanying drawings.

[0026] Embodiments of the present disclosure are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the contents disclosed in this specification. Apparently, the described embodiments are only some of the embodiments of the present disclosure, not all of them. The present disclosure can also be implemented or applied through different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that, in the case of no conflict, the following embodiments and features in the embodiments can be combined with each other. Based on the embodiments in the present disclosure, a...

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Abstract

The invention discloses a three-phase four-bridge-arm inverter based on SiC MOSFET. The three-phase four-bridge-arm inverter comprises a main power circuit, a processor, a direct-current voltage acquisition circuit, a drive protection circuit, a current acquisition circuit and a load voltage acquisition circuit. The direct-current voltage acquisition circuit acquires direct-current input voltage in the main power circuit and feeds back the direct-current input voltage to the processor. The current acquisition circuit acquires load current in the main power circuit and feeds back the load current to the processor. The load voltage acquisition circuit acquires load voltage in the main power circuit and feeds back the load voltage to the processor. The processor outputs eight paths of controlsignals to the drive protection circuit, and the drive protection circuit generates four paths of upper bridge arm drive signals and four paths of lower bridge arm drive signals, wherein the upper bridge arm drive signals and the lower bridge arm drive signals of the same bridge arm are interlocked. The three-phase four-bridge-arm inverter based on the SiC MOSFET has the advantages of being highin driving frequency, high in response speed, small in peripheral component size, small in switching loss, small in heat productivity and the like.

Description

technical field [0001] The invention relates to the technical field of inverters, in particular to a SiC MOSFET-based three-phase four-leg inverter. Background technique [0002] An inverter is an electronic device that converts low voltage (12 or 24 volts or 48 volts) direct current into 220 volts alternating current. Inversion is to convert direct current into alternating current for use by alternating current electrical equipment. A device with an inverter function is generally called an inverter device or an inverter. The generation of the inverter makes it possible to convert direct current to alternating current. Among the existing forms of power supply, there are various forms of DC power sources such as dry batteries, storage batteries and solar cells. When these power sources provide power to AC loads, inverters are required. [0003] Existing inverters based on silicon-based power semiconductor devices have disadvantages such as low power density, large inverter...

Claims

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Application Information

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IPC IPC(8): H02M7/5387H02M1/32
CPCH02M1/32H02M7/53871Y02B70/10
Inventor 纪建辉李明雪纪朋伟马久河谷志锋
Owner 河北汉莎自动化设备科技有限公司
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