Inverted light emitting diode

A light-emitting diode, flip-chip technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of uneven coverage of the insulating protective layer, short circuit, cracking of the insulating protective layer, etc., to improve long-term reliability and technical application range. Wide and small effect of brightness

Pending Publication Date: 2020-07-31
XIAMEN SANAN OPTOELECTRONICS CO LTD
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Problems solved by technology

[0005] refer to figure 2 When covering the insulating protective layer, the bumps will cause the insulating protective layer to be unevenly covered or the insulating protective layer is broken, causing solder paste to drill into the insulating protective layer from the gap (refer to the dark line in the wire frame area in the figure), causing a short circuit risk. During long-term burn-in, there is a risk of solder paste connecting to u-GaN (undoped gallium nitride at the bottom of the epitaxial layer) through the gap and causing a short c

Method used

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Example Embodiment

[0057] reference Image 6 According to the third embodiment of the present invention, the light emitting diode adopts a process of reducing the size of the protrusions and expanding the distribution density of the protrusions on the substrate. Compared with the second embodiment of the present invention, the manufacturing process of this embodiment is operability One of the methods to make the substrate is to change the mask pattern and adjust the etching time to make the convex pattern of predetermined size and appropriate density when making the pattern substrate. The mature technology will not be repeated here. In the chip structure of this embodiment, the height of the protrusions 111 in the area covered by the first semiconductor layer of the substrate 100 is 1 to 2 microns. It can also be said that the height of the protrusions of the entire substrate 100 is 1 to 2 microns, and The substrate 100 is covered by the insulating protective layer 400. The insulating protective ...

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Abstract

An inverted light emitting diode comprises a patterned substrate (100) and an epitaxial light emitting layer (200) on the substrate. The partial area of the substrate is exposed from the epitaxial light emitting layer. The projection (111) of a substrate exposed area is at least covered by an insulating protecting layer. The insulating protecting layer on the projection of the substrate exposed area has fluctuations. The peak height (h) of the fluctuation is 0-0.5 micrometer. Through reducing the fluctuation of the insulating protecting layer which is next to the epitaxial light emitting layer, insulating protecting layer break caused by stress change is prevented, thereby ensuring whole structure of the insulating protecting layer and further improving reliability of a chip.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to designing a patterned substrate structure for flip-chip light-emitting diodes. Background technique [0002] Light-emitting diodes are semiconductor devices that convert electrical energy into light energy, and become LED (Light Emitting Diode) chips. According to different packaging forms, light-emitting diodes can be simply divided into front-mounted light-emitting diodes, flip-chip light-emitting diodes and vertical light-emitting diodes. Among them, flip-chip light-emitting diodes have the advantages of no need for wire bonding, high current drive, and high reliability. Therefore, flip-chip light-emitting diodes have very good applications in general lighting, backlight, flash, display screens, and car lights. . [0003] In order to improve the light-emitting efficiency of light-emitting diodes, patterned substrates are widely used in the manufacture of flip-chip ligh...

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Application Information

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IPC IPC(8): H01L33/44H01L33/20
CPCH01L33/44H01L33/20H01L33/58H01L33/46H01L33/10H01L33/32H01L33/382H01L33/62
Inventor 王锋何安和夏章艮聂恩松彭康伟林素慧
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
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