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A rewritable planar microwave device based on vanadium dioxide phase-change thin film

A technology of vanadium dioxide and microwave devices, which is applied in the direction of electrical components, printed circuit parts, circuit heating devices, etc., can solve the problems of non-rewritable, high-precision process requirements, waste of production costs, etc., and achieve long processing cycle and economical The effect of development time

Active Publication Date: 2021-03-30
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the existing metal microstrip line structure is simple to manufacture, it will not only waste the production cost, but also fail to make further breakthroughs in the application field due to the high precision and non-rewritable factors of the process.

Method used

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  • A rewritable planar microwave device based on vanadium dioxide phase-change thin film
  • A rewritable planar microwave device based on vanadium dioxide phase-change thin film
  • A rewritable planar microwave device based on vanadium dioxide phase-change thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Embodiment 1: Equivalent patch antenna

[0067] see Figure 5 with Image 6 , based on vanadium dioxide (VO 2 ) The first device for the simulation of material phase change characteristics is a planar microwave patch antenna. The pattern of the phase change region 12 on the phase change film 1 corresponding to the planar microwave patch antenna is A-shaped, and is located on the side of the phase change film 1 The edge; the A-shaped figure is formed by sequentially connecting a radiation rectangle, a quarter impedance transformation strip and a feed port microstrip line. On the basis of clarifying the resonant frequency f=5.3GHz, the working wavelength λ=19.2mm is obtained by calculation, and the size of the phase change region is calculated and optimized according to the corresponding relationship between size and wavelength: the length L1 of the radiation rectangle is 11mm±0.2 mm, the width W1 is 9mm±0.15mm; the length L2 of the impedance transformation line is 5mm...

Embodiment 2

[0072] Embodiment 2: Equivalent antenna array

[0073] see Figure 8 with Figure 9 , based on vanadium dioxide (VO 2 ) The second device whose material phase transition properties can be simulated is the patch antenna array antenna. The pattern of the phase change region 12 on the phase change film 1 corresponding to the planar microwave antenna array is composed of four independent A-shaped patch antennas facing each other; each pattern consists of a radiation rectangle, impedance transformation line and feed port The microstrip lines are sequentially connected to form a patch antenna. On the basis of the patch antenna, the distance between the patch antenna elements needs to be adjusted. When the resonant frequency f=5.3GHz, the working wavelength λ=19.2mm is obtained through calculation. According to the corresponding relationship between size and wavelength, through calculation and optimization , the size of the phase change region 12 is as follows: the length L1 of e...

Embodiment 3

[0075] Embodiment 3: Equivalent filter

[0076] see Figure 11 with Figure 12 , based on vanadium dioxide (VO 2 ) The third device that can be simulated by the phase transition properties of materials is the filter. The figure of the phase-change region 12 on the phase-change film 1 corresponding to the planar microwave filter is composed of two A-shaped figures and a Chinese-shaped figure in series combination, and each A-shaped figure is composed of a resonant rectangle and an impedance transformation line, and the middle The glyph pattern is composed of a resonant rectangle and two impedance transformation lines; the structure of the resonant rectangle in the A-shaped pattern is the same as that in the Chinese-shaped pattern, and the structure of the impedance transformation line in the A-shaped pattern and the impedance transformation line in the Chinese-shaped pattern same.

[0077] On the basis of clarifying the resonant frequency f=5.3GHz, the working wavelength λ=...

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Abstract

The invention relates to an erasable planar microwave device based on a vanadium dioxide phase change film, and belongs to the field of planar microwave devices. The device comprises a vanadium dioxide phase change film, a dielectric substrate, a grounding plate, a grid type hot air cover and a resistance wire; a phase change region is arranged on the phase change film, and other regions are non-phase change regions; the grid type hot air cover is tightly arranged on the phase change film in a covering manner; each grid is communicated with a resistance wire; the resistance wires correspondingto the phase change regions of the patch antenna pattern or the antenna array pattern and the like are electrified to heat the air in the grids on the hot air cover, and when the temperature rises to68-72 DEG C, the corresponding phase change regions under the heating grids are changed from an insulating property in the normal state to a conductor property; and the temperature of the phase change region of the patch antenna pattern or the antenna array pattern and the like under the hot air cover is kept at 68-72 DEG C to obtain a planar microwave patch antenna, planar microwave antenna array, planar microwave filter, planar microwave power divider or planar microwave switch.

Description

technical field [0001] The invention belongs to the field of planar microwave devices and relates to the conversion between various planar microwave functional circuits. Specifically, a vanadium dioxide (VO 2 ) The technical method of realizing the functions of antennas, array antennas, filters, power splitters and other devices by using the phase change characteristics of materials. Background technique [0002] In the past industrial production, non-rewritable microstrip devices based on metal microstrip lines have the advantages of high reliability, low manufacturing cost and small size. Existing non-rewritable microstrip devices are generally printed through a mask plate, and the printed plate includes three layers, namely a ground plane, a dielectric layer and a circuit layer. Considering the conductor loss of the signal during transmission, the ground plane and line layer of the traditional metal microstrip line generally use metal wires with high conductivity and hi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05K1/02H05K1/09
CPCH05K1/0201H05K1/09H05K2201/032
Inventor 桑磊徐吉吴少然李帅涛黄文
Owner HEFEI UNIV OF TECH