Optical proximity correction method and manufacturing method of photomask, and manufacturing method of semiconductor device

Abstract

The invention provides an optical proximity correction method of a photomask. The optical proximity correction method comprises the following steps: acquiring a design pattern of the photomask, the design pattern having a cell array; classifying cells according to the design characteristics of the cells in the cell array; performing optical proximity correction on at least one representative cellof each class of cells; and applying a correction result of the representative cell of each class of cells to other cells of each class of cells.

Description

technical field [0001] The invention mainly relates to the field of semiconductor design and manufacture, in particular to an optical proximity correction of a photomask. Background technique [0002] With the continuous development of the semiconductor manufacturing process, the feature size on the logic device node is close to or smaller than the wavelength used in the photolithography process. According to the principle of light diffraction and interference, light waves will be diffracted when passing through the mask, and the light passing through different positions of the mask will also interfere. Therefore, the light intensity distribution actually projected onto the silicon wafer is the result of the superposition of these diffracted and interfered light waves, which is not exactly the same as the mask pattern. [0003] Optical proximity correction (Optical Proximity Correction, OPC) is the core technology in the nanoscale wafer manufacturing process. With the conti...

AI Technical Summary

Problems solved by technology

[0004] With the continuous development of lithography technology, the size of lithography lines is getting narrower and narrower. When the characteristic size of exposure lines is close to the theoretical resolution limit of the exposure system, the spatial image will produce obvious distortion, that is, the optical proximity effect (Optical Proximity Effect) will occur. , OPE), leading to a serious decline in the quality of lithographic patterns

At the same time, not only the adjacent distortion of the pattern caused by the diffraction of the optical imaging process will affect the lithography, but also the impact of the exposure, development, etching and other processing processes of the photoresist on the quality of the lithography cannot be ignored.

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