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A highly stable metal-modified boron-doped diamond electrode and its preparation method and application

A boron-doped diamond and metal modification technology, which is applied in the field of high-stability metal-modified boron-doped diamond electrodes and its preparation, can solve problems such as limited application, and achieve the effect of excellent stability

Active Publication Date: 2021-07-27
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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thus limiting its application

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  • A highly stable metal-modified boron-doped diamond electrode and its preparation method and application

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Experimental program
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Effect test

Embodiment 1

[0033] Step 1. Place the silicon wafer substrate in an acetone solution, ultrasonically clean it for 15 minutes, then ultrasonically clean it in deionized water for 2 minutes, and dry it. Through the above treatment, oil stains on the surface of the substrate are removed, and a clean and dry substrate is obtained. Then suspend and immerse the clean and dry substrate into the suspension of nano-diamond powder for 30 minutes, and finally wash and dry with alcohol to obtain a silicon wafer substrate with nano-diamond particles adsorbed on the surface, and then absorb nano-diamond particles on the surface. The silicon wafer substrate is placed in chemical vapor deposition method for hot wire chemical vapor deposition to obtain the first layer of boron-doped diamond film, the number of hot wire turns is 12 turns, the distance between the hot wire and the substrate is 10cm, and the mass flow ratio of the gas introduced is for B 2 h 6 :H 2 :CH 4 =0.4:49:1, the growth pressure is ...

Embodiment 2

[0040] Step 1. Place the silicon wafer substrate in an acetone solution, ultrasonically clean it for 15 minutes, then ultrasonically clean it in deionized water for 2 minutes, and dry it. Through the above treatment, oil stains on the surface of the substrate are removed, and a clean and dry substrate is obtained. Then suspend and immerse the clean and dry substrate into the suspension of nano-diamond powder for 30 minutes, and finally wash and dry with alcohol to obtain a silicon wafer substrate with nano-diamond particles adsorbed on the surface, and then absorb nano-diamond particles on the surface. The silicon wafer substrate is placed in chemical vapor deposition method for hot wire chemical vapor deposition to obtain the first layer of boron-doped diamond film, the number of hot wire turns is 12 turns, the distance between the hot wire and the substrate is 10cm, and the mass flow ratio of the gas introduced is for B 2 h 6 :H 2 :CH 4 =0.5:49:1, the growth pressure is ...

Embodiment 3

[0048] Step 1. Place the silicon wafer substrate in an acetone solution, ultrasonically clean it for 15 minutes, then ultrasonically clean it in deionized water for 2 minutes, and dry it. Through the above treatment, oil stains on the surface of the substrate are removed, and a clean and dry substrate is obtained. Then suspend and immerse the clean and dry substrate into the suspension of nano-diamond powder for 30 minutes, and finally wash and dry with alcohol to obtain a silicon wafer substrate with nano-diamond particles adsorbed on the surface, and then absorb nano-diamond particles on the surface. The silicon wafer substrate is placed in chemical vapor deposition method for hot wire chemical vapor deposition to obtain the first layer of boron-doped diamond film, the number of hot wire turns is 12 turns, the distance between the hot wire and the substrate is 10cm, and the mass flow ratio of the gas introduced is for B 2 h 6 :H 2 :CH 4 =0.6:49:1, the growth pressure is ...

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Abstract

The invention discloses a high-stability metal-modified boron-doped diamond electrode and its preparation method and application. The high-stability metal-modified boron-doped diamond electrode includes a substrate and an electrode working layer arranged on the surface of the substrate. The electrode working layer includes the first layer of boron-doped diamond film, the second layer of boron-doped diamond film grown on the surface of the first working layer, and the metal nanometer grown on the surface of the first working layer and embedded in the second layer of boron-doped diamond film. particles. The metal-modified boron-doped diamond electrode of the present invention realizes the firm wrapping of the bottom of the metal particle and the electrode, so as to achieve the effect of fixing the metal particle, so that the excellent stability of the boron-doped diamond material and the good electrocatalytic activity of the metal can be fully combined. The metal-modified boron-doped diamond electrode of the invention can be widely used in the fields of electrochemical biosensors, detection of heavy metals, and organic waste water.

Description

technical field [0001] The invention relates to a highly stable metal-modified boron-doped diamond electrode and a preparation method and application thereof, belonging to the field of electrode preparation. Background technique [0002] Boron-doped diamond film electrode (BDD) has high mechanical strength, chemical inertness and excellent electrochemical performance, such as a wide potential window in aqueous solution, high oxygen evolution overpotential and low background current, Hydroxyl radicals can be generated efficiently at the same current density, so that organic matter can be quickly removed, the surface has anti-poisoning and anti-pollution capabilities, and can work stably for a long time in strong corrosive media. Even under high electrochemical load, the passing current density is 2~10A cm 2 After thousands of hours of electrochemical reaction, there is no obvious sign of corrosion. The diamond film has high quality properties in terms of hardness and streng...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/30C23C16/27C23C14/18C23C14/35B82Y15/00
CPCB82Y15/00C23C14/185C23C14/35C23C16/271C23C16/277G01N27/308
Inventor 魏秋平马莉周科朝朱睿童杨万林陈尹豪李志伸
Owner CENT SOUTH UNIV