Solar cell conductive paste, frit and solar cell

A technology of solar cells and conductive pastes, applied to conductive materials dispersed in non-conductive inorganic materials, circuits, photovoltaic power generation, etc., can solve problems such as poor wettability, long ball milling time, large particle size, etc., and achieve normal EL detection , High battery efficiency and excellent bonding strength

Active Publication Date: 2020-08-28
CHANGZHOU JUHE NEW MATERIAL CO LTD
View PDF7 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In addition, the researchers also found that the softening point of the Pb-Bi-Si glass system is relatively high, th

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell conductive paste, frit and solar cell
  • Solar cell conductive paste, frit and solar cell
  • Solar cell conductive paste, frit and solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] 【Sample making】

[0052] (1) Making tellurium-based glass:

[0053] Prepare TeO 2 、 Bi 2 o 3 、WO 3 , ZnO, Al 2 o 3 , LiO 2 According to the ratio shown in Table 1, these glass raw materials were weighed and prepared, and finally small sample glasses A-1 to A-7 were made. Among them, A-1 to A-3 and A-8 are only comparative examples, and A-4 to A-7 are tellurium-based glasses containing no lead, zinc and silicon in this example, and lithium bismuth tellurium as an essential component.

[0054] Table 1 Glass-forming situation (wt%) of sample glass of different formulations

[0055] TeO 2

Bi 2 o 3

WO 3

ZnO SiO 2

Al 2 o 3

Li 2 o

Glass formation A-1 50 26 7 4 3 0.2 9.8 Phase A-2 70 10 9 2 1.5 0.2 7.3 Phase A-3 60 25 9 / 1.5 0.2 4.3 partial phase separation A-4 65 18.8 9 / / 0.2 7 good A-5 55 20 15.8 / / 0.2 9 good A-6 50 35.8 9 / / 0.2 5 ...

Embodiment 2

[0075] 【Sample evaluation】

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Softening point temperatureaaaaaaaaaa
Login to view more

Abstract

The invention discloses solar cell conductive paste, which comprises conductive powder, mixed glass and an organic phase, wherein the mixed glass comprises the following two types of glass components:the first type of glass is selected from at least one of tellurium-based glass which does not contain lead, zinc and silicon and takes tellurium, bismuth and lithium as essential components, and thesecond type of glass is at least one selected from lead silicate glass which takes lead, silicon and vanadium as essential components and does not contain tellurium and bismuth. The invention also provides frit and a solar cell. The solar cell prepared from the conductive paste is normal in EL detection, high in cell efficiency and excellent in bonding strength.

Description

technical field [0001] The invention belongs to the technical field of solar cell paste, and in particular relates to the preparation of Te-Bi-Li lead-free zinc-silicate glass frit and Pb-V-Si tellurium-bismuth-free glass frit, and the conductive paste prepared with the two glass frits. Background technique [0002] A conventional silicon solar cell consists of a front electrode, an anti-reflection film, a P-type silicon semiconductor substrate, an N-type diffusion layer, and a back electrode. With the continuous improvement of battery technology, a passivation layer is added on the semiconductor diffusion layer to improve efficiency. The passivation layer is generally composed of aluminum oxide, silicon oxide, etc., and the anti-reflection film is generally composed of silicon nitride. In addition, cell manufacturers' demand for efficiency makes the diffusion resistance of silicon wafers continue to increase, and the PN junction changes from deep to shallow. [0003] As th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01B1/16H01B1/22H01L31/0224C03C3/12
CPCC03C3/12H01B1/16H01B1/22H01L31/022425Y02E10/50
Inventor 敖毅伟万莉涂小平姜钧天朱立波刘海东
Owner CHANGZHOU JUHE NEW MATERIAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products