Fast recovery diode and preparation method and application thereof
A technology for recovering diodes and blocks, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of large voltage drop, brittleness and high cost of products, improve product performance, avoid silicon wafer brittleness, reduce Fragile effect
Active Publication Date: 2020-09-15
捷捷半导体有限公司
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Problems solved by technology
[0003] 1. The pressure drop of products with the same layout and recovery time is too large, and the silicon wafer is brittle and fragile;
[0004] 2. The high-energy ion implanter is expensive; the implantation depth of the high-energy ion implanter is limited, which cannot meet the production needs of high-voltage fast recovery products;
[0006] 4. The switching speed of the device is affected by the local platinum doping concentration, and it is not easy to achieve the requirement of faster switching speed, etc.
Method used
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Embodiment 1
[0061] This embodiment provides a fast recovery diode, the structure of which is as follows figure 1 As shown, the fast recovery diode includes P layer 2, N-layer 4, front anode metal layer 1, back cathode metal layer 6, N+ diffusion layer 5, and P N+ diffusion layer 5 is arranged between the back of layer 2 and N- layer 4 and cathode metal layer 6 on the back, wherein excess platinum in P layer 2 and N+ diffusion layer 5 is precipitated through the oxygen-rich polysilicon film.
[0062] The platinum doping amount near the PN junction directly affects the recovery time. Because platinum doping leads to an increase in the substrate resistivity, the voltage drop of the product will increase. On the contrary, reducing the platinum doping amount in the P region and N+ region will help reduce the product voltage drop, and Platinum doping will cause crystal lattice deformation of silicon wafers and cause fragmentation. Reducing the amount of platinum doping on the surface is benefic...
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Abstract
The invention provides a fast recovery diode and a preparation method and application thereof. The preparation method comprises the steps of providing an N-type silicon single crystal wafer; preparingN+ diffusion layers on the surfaces of the front and the back of the N-type silicon single crystal wafer in a phosphorus pre-diffusion and phosphorus re-diffusion manner; removing the N+ diffusion layer on the front; diffusing boron on the front with the N+ diffusion layer being removed in a boron pre-diffusion and boron re-diffusion manner; diffusing platinum; carrying out micro-corrosion on thefront and the back to remove an enriched platinum source on the micro-surface; simultaneously depositing oxygen-enriched polycrystalline silicon films on two surfaces; separating redundant platinum out into the oxygen-enriched polycrystalline silicon film; stripping the oxygen-enriched polycrystalline silicon film; depositing a SiO2 thin film at the temperature of 350-450 DEG C; and obtaining thefast recovery diode through groove photoetching, mesa corrosion and passivation. The diode prepared by the preparation method disclosed by the invention can reduce the voltage drop of the product andthe brittleness of the silicon wafer, improve the product performance and reduce the fragment rate while maintaining the fast recovery time of the product.
Description
technical field [0001] The invention relates to a method for preparing a diode, in particular to a method for preparing a fast recovery diode, and belongs to the technical field of semiconductor device preparation. Background technique [0002] Power semiconductor devices are the core devices of electronic circuits. Due to the development of high frequency conversion technology and the development of high efficiency and energy saving, circuit designers require diodes to have short reverse recovery time and better overall performance. In the manufacturing process of silicon fast recovery diode power devices, platinum atoms play the role of adding recombination centers, the purpose of which is to reduce the lifetime of minority carriers in the silicon PN junction, shorten the storage time, and increase the switching speed. The lifetime of minority carriers in silicon is closely related to the concentration of platinum. The greater the concentration of platinum in silicon, the...
Claims
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IPC IPC(8): H01L21/329H01L21/306H01L29/861
CPCH01L29/8613H01L29/66136H01L21/30604Y02P70/50
Inventor 欧阳潇沈怡东王成森
Owner 捷捷半导体有限公司