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Compound, photoresist composition comprising same, photoresist pattern comprising same, and method for manufacturing photoresist pattern

A compound and chemical formula technology, applied in the field of pattern preparation, can solve the problems of sensitivity reduction and line width roughness, etc., and achieve the effect of improving line width roughness, resolution freedom, and high resolution

Active Publication Date: 2020-09-15
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In order to overcome such limitations, attempts to develop EUV photoresists have been actively conducted, however, there are outstanding issues such as improving sensitivity reduction, resolution, and line width roughness (LWR)

Method used

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  • Compound, photoresist composition comprising same, photoresist pattern comprising same, and method for manufacturing photoresist pattern
  • Compound, photoresist composition comprising same, photoresist pattern comprising same, and method for manufacturing photoresist pattern
  • Compound, photoresist composition comprising same, photoresist pattern comprising same, and method for manufacturing photoresist pattern

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Embodiment approach

[0207] Hereinafter, the specification will be described in detail with reference to the embodiments to specifically describe the specification. However, the embodiments according to the present specification can be modified into various other forms, and the scope of the present specification should not be construed as being limited to the embodiments described below. The embodiments of this specification are provided to more fully describe this specification to those skilled in the art.

preparation example 1

[0209] Preparation Example 1-

[0210]

[0211] Cyclopentadiene (132.2g, 2.0mol), 2-carboxyethyl acrylate (130.1g, 1.0mol) and 4-methoxyphenol (2.4g, 0.02mol) were introduced into the high-pressure reactor, and the resultant was Reacted at 180°C for 18 hours, and then vacuum distilled to obtain compound 1 (190 g, 97%).

[0212] Introduce compound 1 (196g, 1.0mol), 1,1-difluoro-2-hydroxyethane-1-sodium sulfonate (220.9g, 1.2mol) and H 2 SO 4 (19.6 g, 0.2 mol) and reacted at 60° C. for 6 hours. After the reaction is complete, introduce H into it 2 O (1 L), the resultant was extracted 3 times with ethyl acetate (1 L), and the solvent was removed. The obtained resultant was recrystallized from ethanol (EtOH) to obtain Compound 2 (330 g, 91%).

[0213] Compound 2 (181 g, 0.5 mol) and triphenylsulfonium bromide (172 g, 0.5 mol) were introduced into H 2 O:dichloromethane=1:1 solution (1L), and reacted at room temperature (25°C) for 12 hours. After the reaction was complete,...

preparation example 2

[0216] Preparation Example 2-

[0217]

[0218] After fumaric acid (117 g, 1 mol) was appropriately dissolved in tetrahydrofuran (THF), cyclopentadiene (198 g, 3 mol) was injected thereinto using a dropping funnel at 0° C. for 30 minutes, and the resultant was Stir at room temperature for 12 hours. Residual cyclopentadiene was removed by vacuum distillation to obtain compound 4 (173 g, 95%).

[0219] Compound 4 (164g, 0.9mol), sodium 1,1-difluoro-2-hydroxyethane-1-sulfonate (166g, 0.9mol) and sulfuric acid (19g, 0.18mol) were introduced and stirred at 60°C for 6 hours . After the reaction was completed, the layers were separated using ethyl acetate, and the solvent was evaporated to obtain the product. The obtained product was dissolved in ethanol to recrystallize, thus, Compound 5 (298 g, 95%) was obtained.

[0220] Dichloromethane (1050 mL), 2-methyl-2-adamantanol (50 g, 0.3 mol) and triethylamine (TEA) (67 g, 0.66 mol) were introduced into the flask and stirred. Use...

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Abstract

The present specification provides a compound, a photoresist composition comprising same, a photoresist pattern comprising same, and a method for manufacturing a photoresist pattern.

Description

technical field [0001] This application claims priority and benefit from Korean Patent Application No. 10-2018-0120977 filed with the Korean Intellectual Property Office on October 11, 2018, the entire contents of which are incorporated herein by reference. [0002] The present description relates to compounds, photoresist compositions containing them and methods for making patterns. Background technique [0003] Photoresist compositions are used in microelectronic device processes for the manufacture of small electronic components, such as in the manufacture of computer chips and integrated circuits. Microelectronic device processes using substrate materials such as silicon-based wafers for the manufacture of integrated circuits are generally as follows. [0004] A photoresist layer of a thin coating film is formed on a substrate using a photoresist composition or a photoresist film, and the resultant is baked to fix the coating film on the substrate. The coated film fixe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C309/23C07C321/10G03F7/004G03F7/032G03F7/26
CPCC07C323/61C07C381/12C07C2603/74C07C2602/42G03F7/0395G03F7/0045C07C309/23C07C321/10G03F7/032G03F7/26C07C309/12C07C323/62C08F32/08G03F1/42
Inventor 朴贤旻林敏映
Owner LG CHEM LTD