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Quantum dot preparation method, photosensitive material layer and photovoltaic device

A technology of quantum dots and anions, applied in the field of quantum dot synthesis, can solve the problems of reducing the free path of exciton diffusion, reducing the absorption bandwidth of quantum dots, affecting the performance of photovoltaic devices, etc., to improve the charge conversion rate and good stability. Effect

Pending Publication Date: 2020-09-18
合肥福纳科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the stability of quantum dots prepared by this method has been improved, the absorption bandwidth of quantum dots has become smaller, and the diffusion free path of excitons has also been reduced, which affects the performance of the prepared photovoltaic devices.

Method used

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  • Quantum dot preparation method, photosensitive material layer and photovoltaic device

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preparation example Construction

[0038] The preparation method of quantum dot provided by the present invention, its flow chart is as follows figure 1 shown, including the following steps:

[0039] Disperse the Grignard reagent and anion precursor in a non-eutectic solvent (the Grignard reagent and anion precursor can be mixed first, and then dispersed in a non-eutectic solvent; they can also be dispersed in a non-eutectic solvent, and then mixed ), finally obtain the mixed solution; heat the mixed solution to the temperature range of the solution required for the nucleation reaction, inject the solution of the metal halide into the mixed solution, carry out the nucleation reaction, cool and purify after the reaction to obtain the quantum point.

[0040] The application utilizes Grignard reagents to prepare quantum dots, Grignard reagents (RMgX, wherein, R is an alkane group; X is a halogen element; X is selected from one of Cl, Br, F or I, preferably Cl or Br ) with metal halides (including but not limited...

Embodiment 1

[0057] In this example, CdC l2 , Se-TOP, CH 3 -(CH 2 ) 17 MgCl is raw material, and this preparation method specifically comprises the following steps:

[0058] (1) Preparation of Se-TOP solution:

[0059] Dissolve 1 mmol of Se powder in 2ml of TOP solution, stir at 60°C in a nitrogen atmosphere for 20 minutes, and cool to room temperature for later use;

[0060] (2) Mix Se-TOP solution with CH 3 -(CH 2 ) 17 MgCl, the reaction formula is as follows:

[0061] CdCl 2 +RMgCl→CdR+MgCl 2

[0062] Take 2 mmol of CH 3 -(CH 2 ) 17 MgCl and the Se-TOP solution prepared by step (1) were dispersed in a three-neck flask containing 20ml of eighteen dilute solution, then stirred evenly and protected with nitrogen for subsequent use.

[0063] (3) Prepare CdSe quantum dots, the reaction formula is as follows:

[0064] Se-TOP+CdR→CdSe

[0065] The mixing temperature in step (2) was raised to 200°C, and then 3 mmol of CdCl 2 Dissolved in 2ml of octadecadene, and then quickly in...

Embodiment 2

[0073] In this example, InCl 3 、CH 3 -(CH 2 ) 17 MgC, (TMS) 3 P is raw material, and this preparation method specifically comprises the following steps:

[0074] (1) Preparation (TMS) 3 P solution:

[0075] Take 0.5 mmol of (TMS) 3 Solution P was dissolved in 2 ml of TOP solution, and mixed evenly under nitrogen atmosphere for later use.

[0076] (2) mixed CH 3 -(CH 2 ) 17 MgCl and (TMS) 3 P solution:

[0077] Take 2 mmol of CH 3 -(CH 2 ) 17 MgCl and (TMS) prepared above 3 The P solution was dispersed together in a three-necked flask containing 20 ml of eighteen diluted solution, then stirred evenly and protected with nitrogen for later use.

[0078] (3) Preparation of InP quantum dots:

[0079] The mixing temperature in step (2) was raised to 200°C, and then 3 mmol of CdCl 2 Dissolved in 2 ml of octadecadene, quickly injected into the mixed solution obtained in step (2) and reacted for 10 minutes; after the reaction was completed, cooled to room temperature,...

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Abstract

The invention provides a quantum dot preparation method, a photosensitive material layer and a photovoltaic device, and the preparation method comprises the following steps: dispersing a Grignard reagent and an anion precursor in a non-eutectic solvent to obtain a mixed solution; heating the mixed solution to a temperature range of the solution during nucleation reaction, injecting a metal halidesolution into the mixed solution for nucleation reaction, and carrying out cooling and purifying after reaction to obtain a quantum dot. By means of the characteristic of rapid crystallization of heatinjection, the quantum dots with sound peak width and few defects can be effectively and rapidly prepared, and the obtained quantum dots are high in stability and do not influence exciton diffusion.The photosensitive material layer of the photovoltaic device prepared from the quantum dot can effectively improve the charge conversion rate and prolong the service life of the photovoltaic device.

Description

technical field [0001] The invention relates to the technical field of quantum dot synthesis, in particular to a preparation method of quantum dots, a photosensitive material layer and a photovoltaic device. Background technique [0002] Quantum dots, as the most potential nanomaterials, lead the trend of science and technology. Regardless of the synthesis method or its corresponding application, the development of quantum dot synthesis technology is always inseparable from one goal, that is, to maximize the excellent performance of quantum dots, such as: the fluorescence intensity, half-peak width, stability, etc. of quantum dots . Because quantum dots have the characteristics of quantum confinement effect and size effect, they can be applied in many technical fields, such as display technology, solar cells, biomarkers, sensing and detection, etc. [0003] Among them, the field of quantum dot photovoltaic cells mainly utilizes the wide absorption band and large exciton Bo...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/15H10K71/12H10K30/15Y02E10/549
Inventor 丁云汪鹏生孙笑
Owner 合肥福纳科技有限公司
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