A high Curie point low-temperature co-fired piezoelectric ceramic formula and preparation method

Abstract

The invention belongs to the technical field of piezoelectric ceramic sheets, and in particular relates to a high-Curie-point low-temperature co-fired piezoelectric ceramic formula and a preparation method, including a main component and a firing aid component, and the composition formula of the main component is PbaCa1‑a[(Mn1 / 3Sb2 / 3)x(Zn1 / 3Nb2 / 3)y(Zr0.5Ti0.5)z]O3+bwt%Ba(Mg1 / 2W1 / 2)O3+cwt%LiNbO3, where a=0.02‑0.05, x=0.01‑ 0.06, y = 0.1-0.4, z = 0.89-0.54, b = 0.1-0.25, c = 0.1-0.2, the sintering aid components include glass phase barium tungstate, Lithium niobate, which accounts for 0.1wt%-0.2wt% of the main component by mass, is doped with a perovskite-structured glass phase on the basis of the main component PMS-PZN-PZT (antimony-manganese-niobium-zinc-lead zirconate titanate) Barium tungstate (Ba(Mg 1 / 2 W 1 / 2 )O 3 ) and lithium niobate (LiNbO 3 ), obtain a piezoelectric ceramic with a sintering temperature lower than 900°C, good piezoelectric performance, high electromechanical coupling coefficient, high Curie temperature, and a large dielectric constant, and the piezoelectric ceramic formula has the advantages of adjustable hardness and softness. range of applications.

Description

technical field [0001] The invention belongs to the technical field of piezoelectric ceramic sheets, in particular to a high Curie point and low temperature co-fired piezoelectric ceramic formula and a preparation method. Background technique [0002] The sintering temperature of traditional lead-based piezoelectric ceramics is relatively high, generally 1200-1300 ℃, which will cause serious volatilization of PbO during high temperature sintering. Cause pollution and endanger human health. At the same time, with the development of Internet of Things, artificial intelligence, 5G networks, etc., piezoelectric ceramics have gradually shifted from the bulk preparation process to the direction of chip, multilayer, thick film, and thin film. Benchmark companies in the piezoelectric industry in foreign countries such as PI, CeramTec, Murata, Kyocera, etc. have invested heavily in the development of piezoelectric stacks, piezoelectric actuators, vibration motors, speakers, piezoelec...

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Problems solved by technology

[0005] Some domestic research institutes have reported formulations below 900°C, mainly for the modification and doping of CuO / LiCO3 / SiO2 for the main body PZN-PNN-PZT (Niobium Zinc-Niobium Nickel-Lead Zirconate Titanate). Adding more sintering aids, the piezoelectric performance is not ideal. At the same time, because the Curie temperature of PZN and PNN system is relatively low, which are 190°C and 130°C respectively, the Curie point of the overall formula is low, which affects the The use of products in high temperature environment

In order to increase the local temperature, some research institutions choose BiScO3-PbTiO3 as the main body or PbTiO3 as the main formula, and modify it on this basis to obtain a formula with a high Curie point, but the coercive field of this type of formula is high and polarization is difficult. , and it is easy to crack during the polarization process, which limits the large-area application of the formula

[0006] There are also some institutions that use special processes, such as chemical pulverization to increase powder activity, hot pressing, microwave assisted sintering, etc. to promote sintering. The process threshold is high, which is not conducive to large-scale production.

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