Laser plasma CVD equipment for preparing diamond single crystal, and working method of laser plasma CVD equipment

Abstract

The invention discloses laser plasma CVD equipment for preparing a diamond single crystal, and a working method of the laser plasma CVD equipment. The laser plasma CVD equipment comprises a lower boxbody and an upper box body which are rotationally connected through a hinge; two laser lamps are mounted on the upper box body, and a microwave generator is arranged on one side of the lower box body;a microwave transmitting horn is mounted on the microwave generator and penetrates through the side wall of the lower box body; and a lower base is mounted in the lower box body and rotationally provided with a lower base station. Storage equipment for mixed gas of methane, acetone and carbon dioxide introduces the mixed gas into a space formed by the upper box body and the lower box body througha carbon gas pipe, the laser lamps are turned on and irradiate seed crystals, first motors are started, two output shafts of the two first motors are matched with gears to drive toothed discs to rotate, the toothed discs drive the seed crystals to rotate through the lower base station, the seed crystals grow, and the technical problem that in the prior art, the laser lamps irradiate the seed crystals incomprehensively, and consequently the seed crystals do not grow quickly is solved.

Description

technical field [0001] The invention relates to the technical field of diamond production, in particular to laser plasma CVD equipment for preparing diamond single crystals and a working method thereof. Background technique [0002] The synthesis rate of single crystal diamond synthesized by ordinary plasma CVD equipment is relatively low, and the output is not high. If the rate needs to be increased, a higher power microwave source is required for improvement, which will greatly increase the cost and energy consumption, thereby increasing the production rate. This increases the cost of equipment and limits the high-speed batch preparation of diamonds. [0003] The patent document (CN201810159834.5) discloses a laser-enhanced plasma CVD preparation single crystal diamond device and its method. The laser-enhanced method can increase the density of the excited plasma and increase the dissociation rate of the gas, thereby accelerating the growth efficiency. Laser irradiation o...

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Problems solved by technology

[0004] The object of the present invention is to provide a kind of laser plasma CVD equipment and working method thereof for preparing diamond single crystal, solve the following technical problems: (1) through the storage equipment of methane, acetone, carbon dioxide mixed gas, through the carbon air pipe, the upper casing and the lower The space formed by the box is filled with mixed gas, the laser light is turned on, the laser light irradiates the seed crystal, the first motor is turned on, the output shafts of the two first motors cooperate with the gear to drive the toothed disc to rotate, and the toothed disc drives the seed crystal through the lower abutment Rotate, the seed crystal grows, and solve the technical problem that the laser lamp does not fully irradiate the seed crystal in the prior art, resulting in the unsatisfactory growth of the seed crystal; The output shaft of the second motor drives the screw to rotate, the screw cooperates with the connecting block of the screw to drive the moving plate to slide in the movable groove, the piston rod of the telescopic cylinder drives the laser cutting head to descend through the connecting plate, and the laser cutting head cuts the polycrystal around the diamond, and then The lower abutment drives the diamond to rotate, and the laser cutting head cuts the diamond longitudinally, which solves the technical problem in the prior art that the diamond needs to be taken out for laser cutting after the seed crystal grows to obtain the diamond, and the processing efficiency of the diamond is not high

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