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MRAM memory array

A technology for storing arrays and arrays, applied in information storage, static memory, digital memory information, etc., can solve problems affecting the density of memory arrays, achieve the effects of accelerating flipping speed and consistency, reducing write voltage, and speeding up flipping speed

Active Publication Date: 2020-10-02
CETHIK GRP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004]However, when forming a memory array, in order to prevent leakage between metal electrodes, the metal electrodes must maintain a certain distance. In the traditional memory array design, oval electrodes are used Can affect the density of the memory array

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Embodiment Construction

[0019] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0020] An embodiment of the present invention provides an MRAM storage array, including: a plurality of storage units arranged in a rectangular array, each storage unit includes an MTJ unit, the magnetization direction of the MTJ unit is along the growth direction of the MTJ film, and two adjacent storage units in the array The top of the MTJ...

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Abstract

The invention provides an MRAM storage array. The array substrate comprises a plurality of storage units which are arranged in a rectangular array form, the storage unit comprises an MTJ unit. The magnetization direction of the MTJ unit is along the growth direction of the MTJ thin film; the tops of the MTJ units in every two adjacent storage units in the array are provided with a shared magneticelectrode, the arrangement directions of all the magnetic electrodes in the array are the same, and the magnetic electrodes are used for providing a magnetic moment for the MTJ units in every two adjacent storage units so as to assist the free layers of the MTJ units in realizing overturning; wherein the cross section of the MTJ unit in each storage unit is circular, and the cross section of the magnetic electrode shared by two adjacent storage units is in a geometrical shape with a long axis and a short axis. The density of the memory array can be improved.

Description

technical field [0001] The invention relates to the technical field of MRAM memory, in particular to an MRAM memory array. Background technique [0002] Spin-transfer torque magnetic memory (STT-MRAM) is a kind of magnetic random access memory that uses spin-polarized current to change the state of MTJ. In addition to the advantages of simple circuit design, fast read and write speed, and unlimited erasing and writing, the memory is relatively The biggest advantage over traditional memories such as DRAM is non-volatility (data will not be lost when power is turned off). In order to reduce the size of the MTJ as much as possible on the basis of meeting the data storage time of the MTJ, the magnetic recording and reference layers in the MTJ need to use perpendicular magnetization materials. [0003] For the MTJ unit with a vertical structure, in order to speed up the flipping of the free layer and achieve the consistency of the flipping of the free layer, a magnetic layer or ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16G11C5/02G11C5/08
CPCG11C11/165G11C5/02G11C5/08G11C11/16
Inventor 杨保林熊保玉承祎琳何世坤
Owner CETHIK GRP
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