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Heterostructure material, preparation method and application thereof

A heterogeneous structure, hydrothermal reaction technology, applied in the direction of structural parts, chemical instruments and methods, active material electrodes, etc., can solve the problems of poor conductivity, material morphology damage, capacity loss, etc., achieve good stability, improve electrical Chemical performance, effect of high capacity

Active Publication Date: 2020-10-02
GUANGZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Existing sulfide materials have poor conductivity, and are prone to volume expansion during charging and discharging, resulting in the destruction of the material's morphology, resulting in irreversible capacity loss and degradation of material performance.

Method used

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  • Heterostructure material, preparation method and application thereof
  • Heterostructure material, preparation method and application thereof
  • Heterostructure material, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] In this example, a heterostructure material is prepared, and the specific preparation method is as follows:

[0038] (1) Soak the carbon cloth in a solution mixed with 10% nitric acid and 10% sulfuric acid at a ratio of 2:1 for 24 hours for pretreatment, and after taking it out, use ethanol and water to ultrasonically clean it several times;

[0039] (2) Immerse the treated carbon cloth in 100ml of water, add 0.72g of cobalt nitrate and 1.64g of dimethylimidazole, take it out after reacting at room temperature for 4 hours, and obtain the ZIF-67 array grown on the carbon cloth after repeated ultrasonic washing and drying with water (CC-@ZIF-67);

[0040] (3) Transfer the CC@ZIF-67 material and sulfur powder into the tube furnace at the ratio of loading ratio of sulfur powder to 1:2. -1 The heating rate is raised to 600°C and kept for 2h to obtain CC@CoS 2 Material;

[0041] (4) Take the CC@CoS obtained by the above steps 2 Immerse in 20ml of ethanol, then add 56.3mg ...

Embodiment 2

[0043] In this example, a heterostructure material is prepared, and the specific preparation method is as follows:

[0044](1) Soak the carbon cloth in a solution mixed with 10% nitric acid and 10% sulfuric acid at a ratio of 2:1 for 24 hours for pretreatment, and after taking it out, use ethanol and water to ultrasonically clean it several times;

[0045] (2) Immerse the treated carbon cloth in 100ml of water, add 0.6g of cobalt chloride and 1.64g of dimethylimidazole, take it out after reacting at room temperature for 3 hours, and obtain ZIF-67 grown on the carbon cloth after ultrasonic washing and drying several times with water Array(CC-@ZIF-67);

[0046] (3) Transfer the CC@ZIF-67 material and sulfur powder into the tube furnace at the ratio of loading ratio of sulfur powder to 1:2. -1 The heating rate is raised to 600°C and kept for 2h to obtain CC@CoS 2 Material;

[0047] (4) Take the CC@CoS obtained by the above steps 2 Immerse in 20ml of ethanol, then add 52.6mg o...

Embodiment 3

[0049] In this example, a heterostructure material is prepared, and the specific preparation method is as follows:

[0050] (1) Soak the carbon cloth in a solution mixed with 10% nitric acid and 10% sulfuric acid at a ratio of 2:1 for 24 hours for pretreatment, and after taking it out, use ethanol and water to ultrasonically clean it several times;

[0051] (2) Immerse the treated carbon cloth in 100ml of water, add 0.84g of cobalt nitrate and 1.91g of dimethylimidazole, take it out after 3 hours of reaction at room temperature, wash and dry it with water several times ultrasonically, and obtain the ZIF-67 array grown on the carbon cloth (CC-@ZIF-67);

[0052] (3) Transfer the CC@ZIF-67 material and sulfur powder into the tube furnace at the ratio of loading ratio of sulfur powder to 1:2. -1 The heating rate is increased to 600°C and kept for 4h to obtain CC@CoS 2 Material;

[0053] (4) Take the CC@CoS obtained by the above steps 2 Immerse in 20ml of ethanol, then add 60mg...

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Abstract

The invention provides a heterostructure material, a preparation method and application thereof. The heterostructure material comprises a carbon cloth, wherein flaky cobalt disulfide is distributed onthe carbon cloth, and tin disulfide is distributed on the surface of the flaky cobalt disulfide. According to the heterostructure material, a carbon cloth is used as a substrate, ZIF-67 grows on thecarbon cloth, a CC@CoS2 array is synthesized through vulcanization, and SnS2 vertically grows on CoS2 so as to synthesize a cobalt disulfide and tin disulfide heterostructure array with excellent electrochemical performance, so that the electrochemical performance of the material is improved by exerting the synergistic effect of the two materials, and the material has good stability and higher capacity in the charging and discharging process.

Description

technical field [0001] The invention belongs to the technical field of electrode materials, and in particular relates to a heterogeneous structure material and its preparation method and application. Background technique [0002] With the development of technology, portable devices emerge in an endless stream. As an important energy storage device, lithium-ion battery is a research hotspot in current energy issues. Lithium-ion batteries are composed of negative electrode materials, separators, electrolytes and positive electrode materials. The discharge voltage of a lithium-ion battery is jointly determined by the lithium potential of the positive and negative electrode materials. The greater the potential of the positive electrode material to lithium and the smaller the potential of the negative electrode material to lithium, the greater the discharge voltage of the single battery. On the premise of the same specific capacity Under the circumstances, the higher the specifi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/58H01M4/62H01M10/054C01G19/00C01G51/00
CPCC01G19/00C01G51/30C01P2002/72C01P2004/03C01P2006/40H01M4/366H01M4/5815H01M4/625H01M4/628H01M10/054H01M2004/021H01M2004/027Y02E60/10
Inventor 范浩森梁华健刘芝婷杨伟郑文芝李晓彤蔡泽林
Owner GUANGZHOU UNIVERSITY
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