Cleaning composition for removing etching residues

A cleaning solution and residue technology, which is applied in the preparation of detergent mixture compositions, detergent compositions, detergent compounding agents, etc., can solve the problem of reduced reliability of semiconductor equipment, damage to silicon oxide layers, and etching rates of silicon oxide layers. higher question

Pending Publication Date: 2020-10-20
JOYFULNESS ADVANCED CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cleaning composition also erodes the silicon oxide layer during the cleaning process, and its etching rate for the silicon oxide layer is too high, so that the underlying silicon oxide layer is often damaged, which in turn leads to the failure of the resulting semiconductor device. The reliability is also reduced

Method used

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  • Cleaning composition for removing etching residues
  • Cleaning composition for removing etching residues
  • Cleaning composition for removing etching residues

Examples

Experimental program
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preparation example

[0082] see figure 2 As shown, the prepared one thickness is The silicon nitride layer 20' and a thickness of An oxide-coated silicon wafer (thermal oxide wafer) fragment 10'. The oxide-coated silicon wafer fragment 10' comprises a silicon layer and a silicon oxide layer on the silicon layer. The silicon nitride layer 20' and the oxide-coated silicon wafer fragment 10' have the same shape and size. Attach two pieces of sealing tape 40 to two opposite edges of the oxide-coated silicon wafer fragment 10' respectively, and then cover and attach the silicon nitride layer 20' to the oxide-coated silicon wafer fragment 10' , thus forming a double-layer structure 1 . Therefore, there is a gap between the silicon nitride layer 20' and the oxide-coated silicon wafer fragment 10', and the distance of the gap is the thickness of the sealing tape 40, which is 80 micrometers (μm).

[0083] First, the double-layer structure 1 is soaked in an etching solution 50 at a temperature of 15...

Embodiment 1 to 15

[0085] Examples 1 to 15: Cleaning solution

Embodiment 1

[0086] The specific components contained in each of the cleaning solutions of Examples 1 to 15 and their concentrations are listed in Table 1. Taking Example 1 as an example, based on the total weight of the cleaning solution, 0.875wt% of HFSA as a fluorine-containing compound was mixed with 99.125wt% of water to obtain the cleaning solution of Example 1. Taking Example 3 again as an example, based on the total weight of the cleaning solution, 1.75wt% of HFSA as a fluorine-containing compound, 0.0084wt% of HF as an additive and 98.2416wt% of water were mixed to obtain Example 3 cleaning solution.

[0087] Table 1: The composition of the cleaning solution of embodiments 1 to 15 (E1 to E15) and its concentration, and the pH value of each cleaning solution

[0088]

[0089]

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Abstract

The present invention provides a cleaning solution for removing etching residues, which includes a fluorine-containing compound, wherein the fluorine-containing compound is selected from the group consisting of fluoride salt, fluoroalkane, hexafluorosilicic acid, hexafluorosilicate, fluorophosphoric acid, hexafluorophosphate, fluoroboric acid, fluoroborate, trifluoromethanesulfonic acid, trifluoromethanesulfonate, fluorosulfonic acid, fluorosulfonate, and any combination of the above. The cleaning solution can improve the effect of removing silicon-containing by-products produced by etching silicon-containing materials such as silicon nitride.

Description

technical field [0001] The invention relates to a cleaning solution for removing etching residues, in particular to a cleaning solution for removing residues produced by etching silicon nitride. Background technique [0002] In semiconductor manufacturing processes, silicon-containing materials such as silicon nitride are often used to form a protective layer for a silicon oxide layer. For example, if figure 1 SiN in x / SiO 2 / Si wafer, wherein the silicon oxide layer 10 and silicon nitride layer 20 (SiN x layers) are deposited on the silicon wafer 30 in a staggered arrangement, and an opening 40 is formed through the silicon oxide layer 10 and the silicon nitride layer 20 . In order to form specific patterns or structures, the SiN x / SiO 2 / Si wafer is dipped into an etchant, and the etchant typically starts to etch the silicon nitride layer 20 through the orifice 40 . [0003] In general, phosphoric acid (H 3 PO 4 ) is often used as an etchant suitable for etching...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D7/08C11D7/10C11D7/26C11D7/32C11D7/36C11D11/00
CPCC11D7/08C11D7/265C11D7/3209C11D7/36C11D7/10C11D11/0047C11D7/28C11D7/30C11D7/34C11D7/50C11D3/245C11D3/30C11D3/34C11D3/36C11D3/042C11D3/046C11D3/162C11D3/2075C11D3/43C11D17/0047G03F7/426
Inventor 林建玮蔡维哲涂胜宏黄右昕何明哲姜欣伶曹恒光
Owner JOYFULNESS ADVANCED CHEM CO LTD
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