Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material

A technology of cadmium zinc telluride and cadmium telluride, which is applied to the growth of polycrystalline materials, chemical instruments and methods, single crystal growth, etc. Loss, reduce equipment cost, reduce the effect of pressure resistance requirements

Active Publication Date: 2020-10-23
中科宏芯(常州)传感科技有限公司
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the preparation process of cadmium telluride and cadmium zinc telluride materials, the successful synthesis of polycrystalline materials of cadmium telluride and cadmium zinc telluride by simple substance of tellurium, simple substance of cadmium and simple substance of zinc is the key technology. Usually, the method of vacuum sintering and sealing of quartz crucible is adopted. After the synthesis is completed The quartz crucible needs to be broken open to take out the crystal ingot inside, and a quartz crucible needs to be lost every time it is synthesized, and the cost is high; When it is large, the explosion of the quartz crucible container often occurs, resulting in material oxidation and scrapping and equipment damage, resulting in great economic losses

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Example 1: Prepare 100kg of CdTe crystal material.

[0033] Preparation process:

[0034] 1) The first crucible 1, the second crucible 2, and the first cover 3 are made of quartz; the first crucible 1 has a first annular groove 11 along the outer peripheral wall, the inner diameter of the lower part of the first crucible 1 is 300mm, and the inner diameter of the upper part is 322mm. The wall thickness is 5mm, the length is 800mm, the width of the first annular groove 11 is 18mm, the wall thickness is 2.5mm, and the depth is 15mm; the upper part of the second crucible 2 is cylindrical, and the lower part is funnel-shaped. The outer diameter of the cylindrical tube is 320mm and the length is 180mm. The total length of the funnel and the thin tube 4 is 100 mm, the inner diameter of the tail end of the thin tube 4 is 8 mm, and the wall thickness is 3 mm; the top of the first cover 3 is closed, the bottom is open and the side wall can be inserted into the first annular groov...

Embodiment 2

[0045] Embodiment 2: prepare 6kgCd 0.96 Zn 0.04 Te crystal material.

[0046] Preparation process:

[0047] 1) The first crucible 1, the second crucible 2, and the first cover 3 are made of quartz; the first crucible 1 has a first annular groove 11 along the outer peripheral wall, the inner diameter of the lower part of the first crucible 1 is 90mm, and the inner diameter of the upper part is 112mm. The wall thickness is 3mm and the length is 800mm. The first annular groove 11 has a width of 18mm, a wall thickness of 2.5mm and a depth of 15mm; the upper part of the second crucible 2 is cylindrical and the lower part is funnel-shaped. The outer diameter of the cylindrical tube is 110mm and the length is 150mm. The total length of the funnel and the narrow tube 4 is 100 mm, the inner diameter of the tail end of the thin tube 4 is 1 mm, and the wall thickness is 2.5 mm; the top of the first cover 3 is closed, the bottom is open, and the side wall can be inserted into the first ...

Embodiment 3

[0058] Embodiment 3: prepare 6kg Cd 0.9 Zn 0.1 Te crystal material.

[0059] Preparation process:

[0060] 1) The first crucible 1, the second crucible 2, and the first cover 3 are made of quartz; the first crucible 1 has a first annular groove 11 along the outer peripheral wall, the inner diameter of the lower part of the first crucible 1 is 90mm, and the inner diameter of the upper part is 112mm. The wall thickness is 3mm and the length is 800mm. The first annular groove 11 has a width of 18mm, a wall thickness of 2.5mm and a depth of 15mm; the upper part of the second crucible 2 is cylindrical and the lower part is funnel-shaped. The outer diameter of the cylindrical tube is 110mm and the length is 150mm. The total length of the funnel and the narrow tube 4 is 100 mm, the inner diameter of the tail end of the thin tube 4 is 2 mm, and the wall thickness is 2.5 mm; the top of the first cover 3 is closed, the bottom is open, and the side wall can be inserted into the first a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of a cadmium telluride or cadmium zinc telluride polycrystal material. The preparation method is characterized by comprising the following preparation process flows of: (1) cleaning and drying a first crucible, a second crucible capable of being put into the first crucible and a first cover covering the first crucible; wherein the first crucible is provided with a first annular groove along the peripheral wall; the first cover is closed at the top and open at the bottom, and the side wall can be inserted into the first annular groove; a hole is formed in the bottom of the second crucible; 2) weighing elemental tellurium and elemental cadmium according to the proportion of cadmium telluride to be synthesized; or weighing elemental tellurium, elemental cadmium and elemental zinc according to the ratio of tellurium-zinc-cadmium to be synthesized. According to the preparation method, a liquid sealing technology is adopted to prevent volatilization loss of cadmium vapor, and the first crucible can be repeatedly used, so that the cost is reduced; by reducing the instantaneous reaction amount of tellurium and cadmium, the severe degree of thetellurium and cadmium combination reaction is reduced, the pressure resistance requirement on synthesis equipment is reduced, and the equipment cost is reduced.

Description

technical field [0001] The invention belongs to the field of preparation of crystal materials, in particular to a method for synthesizing cadmium telluride (CdTe) or cadmium zinc telluride (CdTe) 1- x Zn x Te) new method for polycrystalline materials. Background technique [0002] CdTe and CdZnTe crystals are the preferred substrate materials for making HgCdTe infrared focal plane detectors, and ideal semiconductor materials for making nuclear radiation detectors. In addition, CdTe and CdZnTe crystals are used in the preparation of Thin-film solar cells, infrared windows, light modulators, etc. also have broad applications. [0003] In the preparation process of cadmium telluride and cadmium zinc telluride materials, the successful synthesis of polycrystalline materials of cadmium telluride and cadmium zinc telluride by simple substance of tellurium, simple substance of cadmium and simple substance of zinc is the key technology. Usually, the method of vacuum sintering and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B28/06C30B29/48
CPCC30B28/06C30B29/48
Inventor 孙士文
Owner 中科宏芯(常州)传感科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com