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High-homogeneity semiconductor film growing device and preparation method

A technology for growing devices and semiconductors, which is applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., and can solve the problems of uneven film layer and small nucleation area of ​​the film layer.

Active Publication Date: 2020-10-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above problems, the present invention provides a semiconductor film growth device and a preparation method, which are used to at least partially solve the technical problems of the traditional growth device such as small nucleation area of ​​the semiconductor film layer, uneven film layer, etc.

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  • High-homogeneity semiconductor film growing device and preparation method

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Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0029] An embodiment of the present invention provides a semiconductor film growth device, including: a substrate; a gas source, used to provide a reaction gas to the surface of the substrate; a microwave source, used to provide microwaves to the surface of the substrate to ionize the reaction gas; The antenna unit array includes multiple antenna units with independent voltages, which are used to independently discharge to multiple positions on the substrate surface, so that the ionized gas forms a plasma ball at the discharge end of the antenna unit, and then deposits on the substrate surface to form a semiconductor film layer.

[0030] See figure 1 , figure 1 It is a schematic diagram of the plasma state under a singl...

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Abstract

The invention provides a high-homogeneity semiconductor film growing device and a preparation method. The device comprises a substrate, a gas source, a microwave source, and an antenna unit array; thegas source is used for supplying reaction gas to the surface of the substrate; the microwave source is used for supplying microwaves to the surface of the substrate to realize ionization of the reaction gas; and the antenna unit array comprises a plurality of antenna units with independent voltage which are used for discharging electricity at a plurality of positions on the surface of the substrate so the gas after ionization forms plasma balls at the discharging ends of the antenna units and then forms a semiconductor film layer on the surface of the substrate. According to the provided method, the nucleation density of a semiconductor film can be greatly enhanced, substantial consistence of plasma density in a large area of zones of the substrate is realized, and epitaxial growth of thelarge-area high-quality semiconductor film layer is finally realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a growth device and a preparation method of a high-uniformity semiconductor film, especially a diamond film. Background technique [0002] As the third-generation semiconductor material, diamond has the advantages of large band gap, high thermal conductivity, high electron saturation drift velocity, good thermal and chemical stability, radiation resistance, and corrosion resistance. It is currently the most promising third-generation semiconductor material. generation semiconductor materials. As a semiconductor material, diamond can be used as heat sink, high temperature, high pressure, high frequency field effect transistor diode, ultraviolet light detector, radiation detector, etc. [0003] Polycrystalline diamond is mostly used in auxiliary applications such as heat sinks and packaging, while single crystal diamond has a wider range of applications ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/517C30B29/04C30B25/02
CPCC23C16/274C23C16/517C30B29/04C30B25/02Y02P70/50
Inventor 霍晓迪金鹏王占国周广迪
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI