Photoelectric detector and manufacturing method thereof

Abstract

The invention discloses a photoelectric detector and a manufacturing method thereof. The photoelectric detector comprises a substrate, a buffer layer which is arranged on the substrate, a waveguide layer which is arranged on one side, far away from the substrate, of the buffer layer, a gradient optical matching layer which is arranged on one side, far away from the buffer layer, of the waveguide layer, an absorption layer and a cathode which are arranged on one side, far away from the waveguide layer, of the gradient optical matching layer, a cladding which is arranged on one side, far away from the gradient optical matching layer, of the absorption layer, a contact layer which is arranged on one side, far away from the absorption layer, of the cladding, and an anode which is arranged on one side of the contact layer, wherein the gradient optical matching layer is a single-layer thin film, and in the first direction, the refractive index of the gradient optical matching layer is gradually increased, and the first direction points from the waveguide layer to the absorption layer. The photoelectric detector is advantaged in that advanced focusing can be realized, coupling efficiencyis improved, device process difficulty is reduced, and cost is reduced.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, and more particularly, to a photoelectric detector and a manufacturing method thereof. Background technique [0002] Photodetectors are one of the key devices in the field of semiconductor optoelectronic devices, and have been widely used in optical communication, optical sensing, optical imaging, autonomous driving and other fields in recent years. Especially in the application fields of optical sensing and long-distance imaging, not only the photodetector is required to have high responsivity and high speed, but also the device is required to have a wide spectral range. [0003] For PIN photodetectors, in order to couple light from the waveguide to the absorption layer, evanescent wave-coupled waveguide PIN photodetectors usually use a refractive index between InP and In 0.53 Ga 0.47 The quaternary InGaAsP material with the As refractive index is used as the optical matching l...

AI Technical Summary

Problems solved by technology

[0003] For PIN-type photodetectors, in order to couple light from the waveguide to the absorbing layer, evanescent wave-coupled waveguide-type PIN photodetectors usually use a refractive index between InP and In 0.53 Ga 0.47 The quaternary InGaAsP material with As refractive index is used as the optical matching layer. In the prior art, one optical matching layer and two optical matching layers are used. The focusing effect is poor, the device process is complicated, and the cost is high.

Images