Multi-electron beam focusing apparatus and control method

Abstract

The invention discloses a multi-electron beam focusing device and a control method. The multi-electron-beam focusing device comprises a hot or cold field emission cathode electron source and a grid for generating electron beams, a beam splitter for splitting the electron beams, an accelerating lens for improving the energy of the electron beams, a phase difference eliminating lens for improving the quality of the electron beams, a high-resolution objective lens array for beam spots of the electron beams, an electron beam deflector used for finely adjusting the position of the electron beam, and a beam gate used for controlling the electron beam to pass through, so that the electron beam can be accurately controlled, more electron beams can be accommodated on wafers with the same area to realize simultaneous exposure, and the precision and the speed in integrated circuit processing application are improved.

Description

technical field [0001] The invention relates to the field of high-precision semiconductor processing, in particular to a multi-electron beam focusing device and a control method. Background technique [0002] Integrated circuit performance, such as computing speed and storage density, has followed Moore's Law in the past. In the past few decades, it has become faster and stronger, which has also driven the continuous development of chip processing technology and the development of higher-resolution processing technology. Until now, high-yield and high-precision patterning processing equipment has always been the core equipment of the semiconductor industry. At present, advanced chip processing requires 30 to 50 exposure processes, and the cost of the entire exposure process accounts for about 1 / 3 of the integrated circuit processing cost. Since the lithography machine can meet the needs of industrial production, it has developed into the only choice for exposure equipment i...

AI Technical Summary

Problems solved by technology

However, with this scheme, the number of electron beams depends entirely on the size of a single module. The size of a single module found in the current literature is 2 cm * 2 cm, so that only 16 electron beams can be accommodated on a 4-inch wafer.

Increasing the electron beam can only reduce the size of a single module, but it is foreseeable that there is limited room for improvement with this technology route

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