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A Method for Monolithic Integration of Silicon-Based Quantum Dot Photonic Devices

A technology of silicon-based quantum dots and photonic devices, applied in laser parts, lasers, optical components, etc., can solve problems such as micro-cracks, lattice mismatch thermal expansion coefficient, threading dislocation, etc., to reduce costs and ensure performance. , to avoid the effect of secondary epitaxial growth

Active Publication Date: 2021-11-26
湖南汇思光电科技有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] However, the epitaxial growth technology of silicon-based III-V materials is mainly limited by the differences in polarity, lattice mismatch, and different thermal expansion coefficients between III-V and silicon, so corresponding anti-phase domains (APDs) will appear. , threading dislocations (TDs) and microcracks

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  • A Method for Monolithic Integration of Silicon-Based Quantum Dot Photonic Devices
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  • A Method for Monolithic Integration of Silicon-Based Quantum Dot Photonic Devices

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[0048] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0049] It should be noted that the “first” and “second” mentioned in the present invention only represent different components, and there is no order of them. Figure 6 For example, if the vertical paper surface is left, it is left, if the vertical paper surface is right, it is right, if the vertical paper surface is upward, it is up, and if the vertical paper surface is downward, it is downward. The laser 102 is a single-mode DFB laser, the modulator 103 is a photoelectric absorption modulator, and the detector 105 is a photodetector.

[0050] In this example, if Figure 5 , Figure 6 As shown, the SOI substrate 101 includes a silicon substrate layer 1, a silicon dioxide insulating layer 10, a silicon waveguide layer 11 and a silicon dioxide p...

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Abstract

The invention specifically discloses a method for monolithic integration of photonic devices based on silicon-based quantum dots. The method utilizes high-quality III-V group direct epitaxy technology and quantum dot technology on silicon, and combines lasers with other active and passive optoelectronic devices. Carry out monolithic integration on the CMOS compatible SOI substrate, give full play to the advantage of silicon-based photonics, thereby obtain the silicon-based quantum dot optical emission module that comprises laser, modulator, silicon waveguide and detector integration, because in the present invention The active devices all use the same quantum dot epitaxial heterojunction and are grown simultaneously by MBE equipment, thus avoiding high-cost secondary epitaxial growth. The invention not only ensures the performance of the device but also does not need to introduce secondary epitaxial growth by adopting selective area annealing and side grating etching technology, thereby greatly reducing the cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor substrates, in particular to a method for monolithic integration of photonic devices based on silicon-based quantum dots. Background technique [0002] Over the past half century, electronic integrated circuits have made vital contributions to modern life, especially the information technology industry, but today its signal transmission speed is increasingly difficult to meet people's demand for global Internet traffic. Therefore, today's communication and information industry is facing an imminent problem, that is, how to solve a series of problems such as small transmission bandwidth, high power consumption, long signal delay and high cost of traditional electrical interconnection circuits. Compared with traditional electrical interconnection integrated circuits, optical interconnection that relies on light to transmit information has fast transmission, low loss, and low cost, which has at...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/16H01S5/22H01S5/343G02B6/12G02B6/13G02B6/136
CPCG02B6/12G02B6/131G02B6/136G02B2006/12138G02B2006/12142G02B2006/12169G02B2006/12176G02B2006/12178H01L25/167H01S5/22H01S5/343
Inventor 廖梦雅
Owner 湖南汇思光电科技有限公司