Driving circuit of SiC-MOSFET

Abstract

The invention discloses a driving circuit of a SiC-MOSFET. The driving circuit comprises an isolation circuit, a current amplification module, a logic module and a protection circuit, wherein an inputend of the isolation circuit is connected with an input signal, and the isolation circuit is used for carrying out signal isolation on the input signal; an output end of the logic module is connectedwith the current amplification module and the protection circuit, and the logic module is used for carrying out logic control on working states of the current amplification module and the protectioncircuit; an input end of the current amplification module is connected with the output end of the logic module, an output end of the current amplification module is connected with the SiC-MOSFET, andthe current amplification module is used for amplifying signals input through the logic circuit and converting the signals into a driving current meeting the requirements of the SiC-MOSFET; and the protection circuit is connected with the SiC-MOSFET, and is used for preventing misoperation of the SiC-MOSFET and sudden increase of the drain voltage of the SiC-MOSFET when the SiC-MOSFET is turned off due to high-voltage pulses generated between a gate electrode and a source electrode of the SiC-MOSFET, so as to realize stable turn-off of the SiC-MOSFET.

Description

technical field [0001] The invention relates to a driving circuit of SiC-MOSFET, in particular to a driving circuit of SiC-MOSFET. Background technique [0002] Compared with other materials, SiC is more suitable for working under special conditions of high temperature, high power and high frequency due to its superior electrical properties such as wide bandgap, high breakdown electric field, high saturation drift velocity and high thermal conductivity, so Much favored by people. The SiC-MOSTET produced based on silicon carbide SiC is a unipolar voltage-controlled device, which has the advantages of fast switching speed, high withstand voltage level and good thermal stability, and can work stably in harsh environments such as high temperature and high radiation. The SiC-MOSFET power module has high requirements on the driving circuit, and has strict requirements on the isolation performance, fast performance, and driving capability of the driving circuit. The turn-on satura...

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problem that the driving circuit based on IGBT design in the prior art cannot meet the driving requirements of SiC-MOSFET, the present invention provides a driving circuit of SiC-MOSFET, because the gate threshold voltage of SiC-MOSFET is small, it is easy to be detected by the outside world. In order to improve its working stability, the SiC-MOSFET is required to be turned off by negative voltage, and the drive circuit is driven by isolation; in order to ensure the high speed of the SiC-MOSFET switch, the drive circuit must be able to output a large enough drive current , the gate-source voltage should not exceed the threshold to prevent breakdown of the gate oxide layer, so the technical solutions provided by the present invention include:

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