Insulated gate bipolar transistor and forming method thereof

A bipolar transistor, insulated gate technology, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problem of difficulty in preparing hydrogen-doped regions with stable distribution, and achieve the effect of smooth voltage changes and improved performance

Active Publication Date: 2020-11-13
SEMICON MFG ELECTRONICS (SHAOXING) CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for forming an insulated gate bipolar transistor, so as to solve the difficulty in preparing a hydrogen-doped region with stable distribution in the existing forming method, which is conducive to improving the performance stability of the formed transistor device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Insulated gate bipolar transistor and forming method thereof
  • Insulated gate bipolar transistor and forming method thereof
  • Insulated gate bipolar transistor and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] The core idea of ​​the present invention is to provide a method for forming an insulated gate bipolar transistor, which is conducive to improving the preparation accuracy of the buffer layer in the device.

[0055] specific reference figure 1 As shown, the forming method of the insulated gate bipolar transistor may include:

[0056] Step S100, providing a substrate, the substrate has an opposite first surface and a second surface, and a gate conductive layer, a body of the first doping type are formed in a part of the substrate corresponding to the first surface region and an emitter region of a second doping type;

[0057] Step S200, performing an ion implantation process and an annealing process on the second surface of the substrate to form a buffer region of the second doping type and a collector region of the first doping type;

[0058] Step S300, performing an ion implantation process on the second surface of the substrate to form a hydrogen-doped hydrogen-doped...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an insulated gate bipolar transistor and a forming method thereof. The method comprises the following steps of: after forming a collector region of a first doping type and a buffer region of a second doping type, forming hydrogen doping, so that a hydrogen-doped region can be prevented from being affected by the processing technology of other doped regions to facilitate theimprovement of the control precision of the preparation technology of the hydrogen-doped region and to be easier to form a plurality of hydrogen-doped subareas with the ion concentration peak values sequentially reduced in a direction away from the surface of the substrate. At the moment, based on the formed buffer region and the hydrogen-doped region with the concentration distribution capable ofbeing accurately controlled, efficient electric field cut-off can be achieved when the transistor device is turned off, and the performance of the transistor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an insulated gate bipolar transistor and a forming method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT, Insulated Gate Bipolar Transistor), which combines the gate voltage control characteristics of MOSFET and the low on-resistance characteristics of bipolar transistors, improves the mutual restraint of device withstand voltage and on-resistance , has the advantages of high voltage, high current, high frequency, high power integration density, large input impedance, small on-resistance, and low switching loss. It has gained wide application space in many fields such as frequency conversion home appliances, industrial control, electric and hybrid vehicles, new energy, and smart grid. [0003] Generally speaking, as the substrate thickness of the IGBT (that is, the thickness of the drift region) increases, the turn-off voltage of the device...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/7393H01L29/0603H01L29/0684H01L29/66333
Inventor 王珏陈政戴银徐杨徐承福
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap