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Ultraviolet, visible and infrared wide-spectrum photoelectric detector and preparation method thereof

A photodetector and infrared technology, applied in the field of detectors, can solve the problems of complex preparation process and high preparation cost, and achieve the effects of improving light absorption and light response, large aspect ratio and low cost

Active Publication Date: 2020-11-17
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The preparation cost of wide-spectrum photodetectors on the market today is relatively high, and the preparation process is relatively complicated, requiring a lot of time and energy to explore the preparation method

Method used

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  • Ultraviolet, visible and infrared wide-spectrum photoelectric detector and preparation method thereof
  • Ultraviolet, visible and infrared wide-spectrum photoelectric detector and preparation method thereof
  • Ultraviolet, visible and infrared wide-spectrum photoelectric detector and preparation method thereof

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Embodiment 1

[0055] The Ge heterojunction nanowire structure proposed in the article "Broadband 400-2400nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique" published by Lin Guangning and others in 2019 can achieve detection in the range of 400-2400nm. The preparation process is as follows: First, 5nm Si and 99nm Si are grown on a silicon-on-insulator (SOI) substrate 0.76 Ge 0.24 layer, at 1150°C, 95nm Si will be formed in the buried oxide layer 0.67 Ge 0.3 layer. Then buffered oxide etchant (BOE, Buffered OxideEtch) was used to remove the surface SiO generated during planar Ge condensation. 2 , to determine the pattern formed on the SiGe layer. By electron beam lithography (EBL, E-Beam Lithography) and reactive ion etching (RIE, Reactive ion etching) technology, insulator nanowires were prepared along the [110] orientation on the buried oxide layer. For the pattern, please refer to figure 1 , figure 1 It is a structural schematic di...

Embodiment 2

[0105] see again Figure 4 , this embodiment also provides an ultraviolet, visible and infrared wide-spectrum photodetector on the basis of the above-mentioned embodiment, the ultraviolet, visible and infrared wide-spectrum photodetector is prepared by the preparation method of the above-mentioned embodiment, the photoelectric Detectors include:

[0106] Metal film 50, the material of metal film 50 is Au;

[0107] a glass substrate 10 located on the metal film 50;

[0108] The electrode array 20 is located on the glass substrate 10. The electrode array 20 includes a number of metal electrodes arranged at intervals. The material of the metal electrodes is, for example, Au;

[0109] The ZnO nanowire film 30 is located on the electrode array 20 and the glass substrate 10, and the ZnO nanowire film 30 covers the electrode array 20;

[0110] The Ge quantum dot film 40 is located on the ZnO nanowire film 20 .

[0111] In the description of the present invention, the terms "first...

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Abstract

The invention discloses an ultraviolet, visible and infrared wide-spectrum photoelectric detector and a preparation method thereof. The preparation method comprises the following steps of selecting acleaned glass substrate; preparing an electrode array on the glass substrate, wherein the electrode array comprises a plurality of metal electrodes which are arranged at intervals; spraying nanofiberson the glass substrate on which the electrode array is prepared so as to prepare a ZnO nanowire film covering the electrode array; spin-coating Ge quantum dots on the ZnO nanowire thin film to prepare a Ge quantum dot thin film; and preparing a metal film on the back surface of the glass substrate. The photoelectric detector prepared by the invention has a ZnO nanowire and Ge quantum dot composite structure, the advantages of the two materials can be combined, and the wide-spectrum detection is realized by adopting a low-cost method.

Description

technical field [0001] The invention belongs to the technical field of detectors, and in particular relates to an ultraviolet, visible and infrared wide-spectrum photoelectric detector and a preparation method thereof. Background technique [0002] At present, most photodetectors are based on PN junction photodetector diodes, and photodetectors with wide spectral response have been widely used in image sensing, chemical / biological sensing, communication and other fields. The detection of ultraviolet light and infrared light has a great market for both military and civilian use. For example, in the ultraviolet band, real-time detection of flying targets with a large amount of ultraviolet radiation released from the tail smoke in the solar blind zone can be realized. In the infrared region, it can be used Used in resource investigation, environmental monitoring, medical diagnosis, night vision imaging, etc. [0003] The preparation cost of broadband photodetectors on the mark...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/109H01L31/18
CPCH01L31/0352H01L31/035218H01L31/109H01L31/18Y02P70/50
Inventor 王利明尤杰孙浩张一弛元磊胡辉勇王斌韩本光舒斌
Owner XIDIAN UNIV
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