Multi-stage cavity Raman substrate and preparation method and application thereof

Active Publication Date: 2020-11-20
SHANDONG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Yet the contriver finds, 1) the detection limit of concentration of Raman detection in the prior art is at 10 -15 Around M, the detection limit is high, which cannot meet the needs of many detections; 2) At present, a large number of works mainly use high-cost and complex process templates to realize cavity Raman-enhanced substrate preparation, thus limiting mass production

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  • Multi-stage cavity Raman substrate and preparation method and application thereof
  • Multi-stage cavity Raman substrate and preparation method and application thereof
  • Multi-stage cavity Raman substrate and preparation method and application thereof

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Embodiment 1

[0058] This embodiment provides a method for preparing a multi-level cavity Raman substrate, including the following preparation steps:

[0059] Preparation of molybdenum disulfide: 1.69g of sodium molybdate and 2.28g of thiourea reagent were dissolved in 30mL of water and alcohol mixed solution at room temperature, wherein the volume ratio of water and alcohol was 1:1. Transfer the mixed solution into an autoclave, put the pyramidal silicon chip into the autoclave, and seal it with a lid. Put the reaction kettle into an oven at a temperature of 180°C for 7 hours.

[0060] Preparation of PSi / MoS2 / Au substrate: the concentration of tetrachloroauric acid in the preparation process of gold nanoparticles was 1 mM, and the reaction time was 3 min. The substrate after the reaction was immersed in deionized water and washed three times to remove the residual tetrachloroauric acid solution to obtain a PSi / MoS2 / Au Raman-enhanced substrate.

Embodiment 2

[0062] This embodiment provides a method for preparing a multi-level cavity Raman substrate, including the following preparation steps:

[0063] Preparation of molybdenum disulfide: 1.69g of sodium molybdate and 2.28g of thiourea reagent were dissolved in 30mL of water and alcohol mixed solution at room temperature, wherein the volume ratio of water and alcohol was 1:1. Transfer the mixed solution into an autoclave, put the pyramidal silicon chip into the autoclave, and seal it with a lid. Put the reaction kettle into an oven at a temperature of 180°C for 7 hours.

[0064] Preparation of PSi / MoS2 / Au substrate: the concentration of tetrachloroauric acid in the preparation process of gold nanoparticles was 1 mM, and the reaction time was 1 min. The substrate after the reaction was immersed in deionized water and washed three times to remove the residual tetrachloroauric acid solution to obtain a PSi / MoS2 / Au Raman-enhanced substrate.

Embodiment 3

[0066] This embodiment provides a method for preparing a multi-level cavity Raman substrate, including the following preparation steps:

[0067] Preparation of molybdenum disulfide: 1.69g of sodium molybdate and 2.28g of thiourea reagent were dissolved in 30mL of water and alcohol mixed solution at room temperature, wherein the volume ratio of water and alcohol was 1:1. Transfer the mixed solution into an autoclave, put the pyramidal silicon chip into the autoclave, and seal it with a lid. Put the reaction kettle into an oven at a temperature of 180°C for 7 hours.

[0068] Preparation of PSi / MoS2 / Au substrate: the concentration of tetrachloroauric acid in the preparation process of gold nanoparticles was 1 mM, and the reaction time was 2 min. The substrate after the reaction was immersed in deionized water and washed three times to remove the residual tetrachloroauric acid solution to obtain a PSi / MoS2 / Au Raman-enhanced substrate.

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Abstract

The invention relates to the field of optical detection materials, and particularly provides a multi-stage cavity Raman substrate and a preparation method and application thereof. Pyramid silicon is used as a substrate, molybdenum disulfide nanosheets vertically grow on the surface, and in-situ reduced gold nanoparticles are compounded on molybdenum disulfide. The preparation method comprises thesteps of preparing a molybdenum disulfide nano-cavity which vertically grows on the surface of pyramid silicon, and modifying gold nano-particles on the surface of molybdenum disulfide through an in-situ reduction method to obtain the multi-stage cavity Raman substrate. The problems that a Raman substrate is high in detection limit, the preparation process is tedious, and large-batch production isnot facilitated in the prior art are solved.

Description

technical field [0001] The disclosure relates to the field of optical detection materials, and specifically provides a multi-cavity Raman substrate, a preparation method and application thereof. Background technique [0002] The statements herein merely provide background information related to the present disclosure and may not necessarily constitute prior art. [0003] Raman enhancement, a physical phenomenon, has attracted the attention of researchers in recent years because it can provide ultrasensitive and label-free chemical and biological analysis. Much effort has been made by researchers to improve the enhancement strength, sensitivity, and uniformity of Raman-enhanced substrates. Studies have shown that these indicators depend not only on the number and density of hot spots generated by the laser excitation of noble metals, but also on improving the utilization of light. Compared with ordinary substrates, the three-dimensional cavity structure has excellent light-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65B82Y15/00B82Y40/00
CPCG01N21/658B82Y15/00B82Y40/00
Inventor 张超李振赵晓菲郁菁满宝元
Owner SHANDONG NORMAL UNIV
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