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Photoresist, patterning method of photoresist and etching method of integrated circuit board

A photoresist and patterning technology, which is applied in the field of photolithography, can solve the problems of large edge roughness of photoresist pattern lines and high energy of secondary electrons, so as to improve the quality of photolithography, improve performance, and reduce edge roughness Effect

Active Publication Date: 2022-04-01
常州华睿芯材科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the energy of secondary electrons is high, which easily leads to large roughness of the photoresist pattern line edge, especially for high-resolution photolithographic imaging of nodes below 16nm

Method used

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  • Photoresist, patterning method of photoresist and etching method of integrated circuit board
  • Photoresist, patterning method of photoresist and etching method of integrated circuit board
  • Photoresist, patterning method of photoresist and etching method of integrated circuit board

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Embodiment Construction

[0033] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of ...

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Abstract

The invention discloses a photoresist, which comprises, in parts by weight, an organic solvent, 1 to 50 parts of functional particles, and 0 to 2 parts but not 0 parts of a free radical quencher. The functional particles include free radical polymerizable Type metal oxides and organic ligands coated on the surface of the metal oxides, the organic ligands have radical-initiated polymerization groups. The invention also discloses a photoresist patterning method. The invention also discloses an etching method for the integrated circuit board.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular to a photoresist, a patterning method of the photoresist and an etching method of an integrated circuit board. Background technique [0002] Due to the continuous improvement of integration and the continuous shrinking of device size, the manufacturing of chips puts forward very harsh process conditions for photolithography, including limit feature size, edge roughness, size uniformity, photoresist cross-sectional morphology, defects, etc. The comprehensive performance of the photoresist can be evaluated by RLS, that is, R (resolution-characteristic line width), L (LER or LWR edge roughness), and S (sensitivity). In order to meet the requirements of industrial production, photoresists need to meet the following indicators: resolution<16nm, LWR<15%, sensitivity<20mJ / cm 2 . Extreme ultraviolet lithography (extreme ultraviolet, EUV for short) is known as the most pr...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004
CPCG03F7/70216H01L21/0274H01L21/3081
Inventor 徐宏何向明王倩倩
Owner 常州华睿芯材科技有限公司