Check patentability & draft patents in minutes with Patsnap Eureka AI!

Dynamic gas isolation device

A gas isolation and dynamic technology, applied in the field of lithography, can solve problems affecting exposure quality, uneven air pressure of isolation devices, EUV beam inhomogeneity, etc.

Pending Publication Date: 2020-11-20
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The isolation device in the related art is usually provided with a plurality of small nozzles to inject air into the device, and use the air flow to suppress the diffusion of pollutants, but this method will form uneven air pressure inside the isolation device, and the EUV beam will be isolated when it passes through the isolation device. The absorption rate of the gas absorption in the device is exponentially related to the air pressure, so the uneven air pressure will cause the inhomogeneity of the EUV beam, which will affect the exposure quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dynamic gas isolation device
  • Dynamic gas isolation device
  • Dynamic gas isolation device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure, and to fully convey the scope of the present disclosure to those skilled in the art.

[0022] It should be understood that the terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" may also be meant to include the plural forms unless the context clearly dictates otherwise. The terms "comprising", "comprising", "containing" and "having" are inclusive and thus indicate the presence of state...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention particularly relates to a dynamic gas isolation device. The dynamic gas isolation device comprises a main pipeline, a gas supply device and a gas pretreatment device, the main pipeline comprises a wide opening end and a narrow opening end, the wide opening end is used for being communicated with a first cavity, the narrow opening end is used for being communicated with a second cavity, the cleanliness of the first cavity is higher than that of the second cavity, and a gas inlet is formed in the side wall of the main pipeline; the gas supply device comprises a high-purity gas source and a gas pipeline; two ends of the gas pipeline are respectively communicated with the gas inlet and the high-purity gas source; the gas pretreatment device comprises a gas flow homogenizer and atemperature regulator; and the gas flow homogenizer and the temperature regulator are arranged in the gas pipeline. According to the dynamic gas isolation device, pollutants in the second cavity can be prevented from diffusing towards the first cavity, isolation of two vacuum environments with different requirements is achieved, and the uniformity and temperature stability of gas flow are guaranteed through the gas flow homogenizer and the temperature regulator.

Description

technical field [0001] The present application belongs to the technical field of photolithography, and in particular relates to a dynamic gas isolation device. Background technique [0002] This section provides background information related to the present disclosure only and is not necessarily prior art. [0003] Extreme Ultraviolet (EUV) lithography uses 13.5nm wavelength of extreme ultraviolet light for lithography, because air and almost all refractive optical materials have a strong absorption effect on 13.5nm wavelength of extreme ultraviolet radiation, so , The interior of the extreme ultraviolet lithography machine needs to be set in a vacuum environment, and EUV illumination optical system, imaging optical system, mask table and workpiece table and other components or systems need to be set in corresponding vacuum chambers. [0004] Due to the transmission requirements of extreme ultraviolet light beams, the various vacuum chambers are connected. Since each compon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
CPCG03F7/70916G03F7/70908
Inventor 王魁波吴晓斌谢婉露罗艳沙鹏飞韩晓泉李慧
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More