Nanoscale field effect transistor based on MnBi2Te4 single layer

Abstract

The invention discloses a nanoscale field effect transistor structure based on an MnBi2Te4 single layer, and belongs to the technical field of nanoscale electronic devices. According to the transistorstructure disclosed in technical scheme, the nanoscale field effect transistor based on the MnBi2Te4 single layer is characterized in that the nanoscale field effect transistor based on the MnBi2Te4single layer is composed of a single layer structure of an MnBi2Te4 material; one end of a single-layer structure of the MnBi2Te4 material is subjected to P-type doping, the other end of the single-layer structure is subjected to N-type doping, an intermediate region is an intrinsic structure of the single-layer structure, and a PIN junction structure is formed; a drain electrode and a source electrode are respectively applied to two ends of the PIN junction structure; a silicon dioxide dielectric medium and a grid electrode are applied to the upper side and the lower side at a time to form afield effect transistor; when forward bias voltage and reverse bias voltage are applied to the two ends of the field effect transistor respectively, the field effect transistor shows the rectificationcharacteristic, and the rectification effect is further regulated and controlled through grid electrode voltage. The invention has the advantages of ultrathin structure, adjustable size, excellent performance and the like.

Description

technical field [0001] The invention belongs to the technical field of nanoscale electronic devices, in particular to a MnBi-based 2 Te 4 Single-layer nanoscale field-effect transistors. Background technique [0002] In the post-Moore era, the development of traditional silicon-based devices has encountered a major bottleneck, and it is necessary to adopt new technologies or find new materials to replace silicon-based devices. In the past ten years, two-dimensional layered materials have attracted great research interests of many scientists due to their unique geometric and electronic structures, mechanical and optoelectronic properties. Such as graphene, silicene, boron nitride, germanene, stannene, transition metal dichalcogenides, phosphorene, MXene, boronene, etc. have been successfully prepared in the laboratory. A large number of studies have found that many two-dimensional single-layer materials show some excellent properties in terms of force, heat, light, and ele...

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Problems solved by technology

However, regarding the MnBi 2 Te 4 There are few reports on the design of field effect transistor devices with single-layer structure

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