Nanoscale field effect transistor based on MnBi2Te4 single layer

A field-effect transistor and nano-scale technology, which is applied in the field of nano-scale electronic devices, can solve the problems of few reports on the design of field-effect transistor devices, and achieve the effects of obvious field effect, excellent rectification performance and ultra-thin structure.

Pending Publication Date: 2020-11-27

HENAN NORMAL UNIV

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Problems solved by technology

However, regarding the MnBi 2 Te 4 There are few reports on the d...

Method used

By measuring its electrical properties such as current-voltage curves, the field effect properties of this kind of nanoscale PIN junction field effect transistor based on MnBi2Te4 monolayers have been revealed, for furthe...

Abstract

The invention discloses a nanoscale field effect transistor structure based on an MnBi2Te4 single layer, and belongs to the technical field of nanoscale electronic devices. According to the transistorstructure disclosed in technical scheme, the nanoscale field effect transistor based on the MnBi2Te4 single layer is characterized in that the nanoscale field effect transistor based on the MnBi2Te4single layer is composed of a single layer structure of an MnBi2Te4 material; one end of a single-layer structure of the MnBi2Te4 material is subjected to P-type doping, the other end of the single-layer structure is subjected to N-type doping, an intermediate region is an intrinsic structure of the single-layer structure, and a PIN junction structure is formed; a drain electrode and a source electrode are respectively applied to two ends of the PIN junction structure; a silicon dioxide dielectric medium and a grid electrode are applied to the upper side and the lower side at a time to form afield effect transistor; when forward bias voltage and reverse bias voltage are applied to the two ends of the field effect transistor respectively, the field effect transistor shows the rectificationcharacteristic, and the rectification effect is further regulated and controlled through grid electrode voltage. The invention has the advantages of ultrathin structure, adjustable size, excellent performance and the like.

Application Domain

NanoinformaticsSemiconductor devices

Technology Topic

DopingGate voltage +8

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Examples

Experimental program(1)

Example Embodiment

[0012] Example

[0013] The invention is constructed by MnBi 2 Te 4 The single-layer structure of the material is P-type doped and N-type doped at both ends, and the middle area is retained as its intrinsic structure, and silicon dioxide dielectric and gate are applied on the upper and lower sides to obtain the PIN junction field effect Transistor. The present invention uses the industry's advanced device design tool QuantumATK ( Smidstrup,etal.,QuantumATK:an integrated platform of electronic and atomic-scalemodelling tools[J].J.Phys.:Condens.Matter 32,015901(2020)) for device model design and performance measurement.

[0014] Through the measurement of its electrical properties such as current-voltage curve, it is revealed that the MnBi-based 2 Te 4 The field effect properties of the single-layer nano-scale PIN junction field effect transistor provide relevant theoretical basis and model construction schemes for further design and realization of field effect transistor devices with ultra-thin structure, low power consumption, excellent performance and adjustable size.

[0015] This is based on MnBi 2 Te 4 The realization of a single-layer nanoscale PIN junction field effect transistor can be completed as follows:

[0016] One, follow as figure 1 As shown, MnBi 2 Te 4 P-type doping and N-type doping are performed on the left and right sides of the single-layer structure of the material, and the middle region is retained as its intrinsic structure to form a PIN junction structure.

[0017] 2. Obtain MnBi above 2 Te 4 A drain electrode and a source electrode are applied to both ends of the single-layer PIN junction structure, and a silicon dioxide dielectric layer and a gate are applied to the upper and lower sides of the structure, and the structure is based on MnBi 2 Te 4 Single-layer nano-scale PIN junction field effect transistor, and the size perpendicular to the transport direction can be adjusted arbitrarily.

[0018] 3. When the above structure is based on MnBi 2 Te 4 When a single-layer nano-scale PIN junction field effect transistor is applied with a forward bias and a reverse bias at both ends, the current through the field effect transistor can be obtained by the following formula

[0019]

[0020] When the gate voltage is zero, its current-voltage curve is like figure 2 As shown in a, it shows excellent rectification (see figure 2 a), the rectification ratio is as high as 10 7 The magnitude, and the reverse conduction threshold voltage is relatively low, 0.2V. When the gate voltage is 10V and -10V, the current-voltage and rectification curves are as figure 2 As shown in b and 2c, the conduction current is significantly increased.

[0021] Based on MnBi 2 Te 4 The single-layer nanoscale PIN junction field effect transistor has the characteristics of ultra-thin structure, adjustable size, low power consumption, excellent rectification performance, and obvious field effect. Various types of field effect transistors of different sizes and sizes can be made according to actual needs. Such as figure 1 As shown, this is based on MnBi 2 Te 4 The thickness of the single-layer PIN junction field effect transistor is about 1.1nm, the structure is ultra-thin, and it has important potential applications in nanoscale field effect transistors.

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