Nanoscale field effect transistor based on MnBi2Te4 single layer
A field-effect transistor and nano-scale technology, which is applied in the field of nano-scale electronic devices, can solve the problems of few reports on the design of field-effect transistor devices, and achieve the effects of obvious field effect, excellent rectification performance and ultra-thin structure.
Pending Publication Date: 2020-11-27
HENAN NORMAL UNIV
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Abstract
The invention discloses a nanoscale field effect transistor structure based on an MnBi2Te4 single layer, and belongs to the technical field of nanoscale electronic devices. According to the transistorstructure disclosed in technical scheme, the nanoscale field effect transistor based on the MnBi2Te4 single layer is characterized in that the nanoscale field effect transistor based on the MnBi2Te4single layer is composed of a single layer structure of an MnBi2Te4 material; one end of a single-layer structure of the MnBi2Te4 material is subjected to P-type doping, the other end of the single-layer structure is subjected to N-type doping, an intermediate region is an intrinsic structure of the single-layer structure, and a PIN junction structure is formed; a drain electrode and a source electrode are respectively applied to two ends of the PIN junction structure; a silicon dioxide dielectric medium and a grid electrode are applied to the upper side and the lower side at a time to form afield effect transistor; when forward bias voltage and reverse bias voltage are applied to the two ends of the field effect transistor respectively, the field effect transistor shows the rectificationcharacteristic, and the rectification effect is further regulated and controlled through grid electrode voltage. The invention has the advantages of ultrathin structure, adjustable size, excellent performance and the like.
Application Domain
NanoinformaticsSemiconductor devices
Technology Topic
DopingGate voltage +8
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