Manufacturing method of self-aligned metal layer, semiconductor device and electronic device

Abstract

The invention provides a manufacturing method of a self-aligned metal layer, a semiconductor device and an electronic device. The method comprises the following steps: performing process manufacturability splitting on a design mask of a metal layer; providing a substrate, wherein the substrate comprises a target film layer for manufacturing a metal layer; forming a first structure pattern on the target thin film layer by using the first sub-mask, and forming a side wall by attaching to the side wall of the first structure pattern; performing photoetching and etching by using the second sub-mask, and forming a corresponding second structure pattern on the mask coating where the first structure pattern is located based on a self-alignment effect; removing the first structure pattern, and leaving the side wall and the second structure pattern; patterning the target thin film layer by taking the side walls and the second structure pattern as masks; and forming a metal layer in the patterned target thin film layer. According to the scheme, the side wall process is applied after the first photoetching, so that the minimum distance between multiple photoetching patterns is effectively protected, the overlay deviation of the metal layer is reduced, and the process manufacturing yield is improved.

Description

technical field [0001] The present disclosure relates to the technical field of integrated circuits, in particular to a method for manufacturing a self-aligned metal layer, a semiconductor device and electronic equipment. Background technique [0002] Multiple lithography process technology refers to the method that the core design layer of the chip cannot be realized at one time using a lithography machine, but must be used two or more times. For the metal layer, especially the metal layer designed in two directions, when one photolithography cannot satisfy the production of the core layer, two or more photolithography etching techniques must be used, which is called LELE, or LEn, where n Identifies the number of times the LE process was used. Taking LELE technology as an example, its implementation method is as follows; [0003] First, split the core layer into mask A and mask B, and the two masks carry different design layers respectively. Secondly, use mask A to perfo...

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Problems solved by technology

Therefore, it is inevitable that when A and B are transferred to the target thin film coating, defects such as too narrow size or connected line ends will occur, which seriously restricts the process yield.

[0005] In addition, the above process method requires that the distance between the design rules A and B should not be too small, which relaxes the design rule conditions and hinders the performance improvement of some devices.

[0006] In addition, based on the technology of self-aligned double pattern imaging technology and multiple cutting process, there is the possibility of using at least three masks, and the self-aligned double pattern imaging technology has greater constraints on the design rules, which is often not conducive to use on both sides. To the process realization of the metal layer

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