Method for transferring solar cell substrate

Abstract

The invention discloses a transfer method of a solar cell substrate. The method comprises the following steps of S1, battery structure growth; S2, metal bonding layer evaporation on the surfaces of abattery epitaxial layer and a flexible substrate; S3, temporary substrate manufacturing; S4, temporary substrate bonding layer evaporation; S5, substrate transfer; S6, substrate removal; S7, device manufacturing; S8, annealing; S9, temporary substrate transfer; and S10, scribing and testing. According to the invention, the method is simple in process and convenient to operate, can effectively solve the problems of infirm bonding of temporary bonding glue, difficulty in cleaning with glue, difficulty in alloy annealing with glue and bubbling and failure of the surface of the battery caused by mismatching of expansion coefficients of the flexible substrate and the epitaxial layer after the thin-film battery is stripped, can reduce the cost of the battery, and improves the yield of the battery.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for transferring a solar cell substrate. Background technique [0002] Gallium arsenide thin-film solar cells have a better band gap matching with the full spectrum of each junction cell, which helps to fully absorb sunlight, making its photoelectric conversion efficiency far ahead of other solar cells, and its light weight, easy to bend characteristics, It is highly dependent on space power systems such as aerospace and aviation. Stratospheric airships and solar-powered unmanned aerial vehicles are mainly used in the fields of communication, resource exploration and military reconnaissance. Due to their long time in the air during the day, strong flexibility and large coverage areas, gallium arsenide thin-film batteries are an irreplaceable choice. . Improving the conversion efficiency of gallium arsenide solar cells, reducing the surface density of cells, and the...

AI Technical Summary

Problems solved by technology

[0019] In the technical step (3), there is a strong dependence on professional substrate stripping equipment. At present, there is no equipment suitable for industrial stripping. The stripping time is quite long, about 6 to 10 hours per piece; in addition, the stripping time is long. Susceptible to corrosion, which affects product yield and is not conducive to large-scale production;

[0020] In technical steps (4) and (6), the thinner epitaxial layer and flexible substrate are peeled off, and the structure is larger than 30-40 microns. The temporary bonding operation is more complicated, and the quality of bonding is extremely high; after bonding, a process is required. A series of device processing, because there is a layer of glue between the battery structure and the supporting substrate, the cleaning and etching in the process will corrode the bonding layer due to the solution, which will affect the quality of the bonding and cause delamination; in addition, the wafer carries glue, alloy Annealing needs to increase the trouble, need to make a professional fixture to fix the wafer, it is not easy to control the yield rate

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