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A silicon photocathode modified by an amorphous molybdenum sulfide film and its preparation method

A molybdenum sulfide, amorphous technology, applied in electrodes, electrolysis components, electrolysis process, etc., can solve the problems of uneven deposition thickness, low deposition rate, etc., achieve low reagent cost and environmental protection, simple and easy preparation process, excellent catalytic hydrogen evolution active effect

Active Publication Date: 2021-11-23
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although silicon photocathodes with satisfactory photocatalytic performance can occasionally be obtained, these technical approaches have the disadvantages of very low deposition rates or uneven deposition thicknesses.

Method used

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  • A silicon photocathode modified by an amorphous molybdenum sulfide film and its preparation method
  • A silicon photocathode modified by an amorphous molybdenum sulfide film and its preparation method
  • A silicon photocathode modified by an amorphous molybdenum sulfide film and its preparation method

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Embodiment 1

[0018] A method for preparing an amorphous molybdenum sulfide thin film modified silicon photocathode, comprising the following steps:

[0019] Cut the p-type single crystal silicon into a square sample with a side length of 1cm with a glass knife, place it in a mixed solution of 10mL concentrated sulfuric acid and 5mL hydrogen peroxide at 60 o C for 30 minutes, then etched with 0.5% hydrofluoric acid for 5 minutes to obtain bare silicon without an oxide layer; take 1.0 mmol of ammonium thiomolybdate dissolved in 10 mL of water to prepare a 0.1M ammonium thiomolybdate solution, and then Take 0.1mL of the ammonium thiomolybdate solution and drop it into 10mL of 0.5% hydrofluoric acid solution to prepare a 1.0mM ammonium thiomolybdate mixed hydrofluoric acid solution, and place the above-mentioned p-type single crystal silicon without oxide layer on the The solution was placed in the solution for 5min, and then washed with a large amount of ultrapure water and dried in an argon ...

Embodiment 2

[0021] A method for preparing an amorphous molybdenum sulfide thin film modified silicon photocathode, comprising the following steps:

[0022] Cut the p-type single crystal silicon into a square sample with a side length of 1cm with a glass knife, place it in a mixed solution of 10mL concentrated sulfuric acid and 5mL hydrogen peroxide at 60 o C for 30 minutes, then etched with 5.0% hydrofluoric acid for 5 minutes to obtain bare silicon without an oxide layer; take 1.0 mmol of ammonium thiomolybdate dissolved in 10 mL of water to prepare a 0.1M ammonium thiomolybdate solution, and then Take 0.05mL of the ammonium thiomolybdate solution and drop it into 10mL of 1.0% hydrofluoric acid solution to prepare a 0.5mM ammonium thiomolybdate mixed hydrofluoric acid solution, and place the above-mentioned p-type single crystal silicon without oxide layer on the 10min in this solution, thereafter wash with a large amount of ultrapure water and dry with argon, make such as figure 1 The ...

Embodiment 3

[0024] A method for preparing an amorphous molybdenum sulfide thin film modified silicon photocathode, comprising the following steps:

[0025] Cut the p-type single crystal silicon into a square sample with a side length of 1cm with a glass knife, place it in a mixed solution of 10mL concentrated sulfuric acid and 5mL hydrogen peroxide at 60 o C for 30 min, followed by etching with 3.0% hydrofluoric acid for 5 min to obtain bare silicon without an oxide layer; take 1.0 mmol of ammonium thiomolybdate dissolved in 10 mL of water to prepare a 0.1M ammonium thiomolybdate solution, and then Take 0.01mL of the ammonium thiomolybdate solution and drop it into 10mL of 2.0% hydrofluoric acid solution to prepare a 0.1mM ammonium thiomolybdate mixed hydrofluoric acid solution, and place the above-mentioned p-type single crystal silicon without oxide layer on the 20min in this solution, thereafter wash with a large amount of ultrapure water and dry with argon, make such as figure 1 The ...

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Abstract

The invention discloses a silicon photoelectric cathode modified by an amorphous molybdenum sulfide film and a preparation method thereof, which belongs to the field of photoelectric catalysis semiconductor materials, and provides a simple and efficient preparation of a silicon photoelectric cathode modified by an amorphous molybdenum sulfide film under mild conditions. The cathode method, the method of the present invention uses soluble thiomolybdate as the reaction raw material, through the simple room temperature liquid phase oxidation-reduction reaction with the surface of the silicon chip in the medium of hydrofluoric acid solution, controllably in situ on the silicon photocathode Depositing amorphous molybdenum sulfide, the thickness of the amorphous molybdenum sulfide film can be controlled simply by changing the concentration and reaction time of thiomolybdate, the raw material cost and preparation efficiency are all better than the prior art; the obtained amorphous molybdenum sulfide and silicon The photocathode has a tight interfacial binding effect, which enables efficient photogenerated electron transport.

Description

technical field [0001] The invention belongs to the technical field of photoelectric catalysis semiconductor materials, and in particular relates to a silicon photocathode modified with an amorphous molybdenum sulfide film and a preparation method thereof. Background technique [0002] Photocatalytic pure water splitting and carbon dioxide reduction is a very effective way to develop and convert solar energy, and the key and most basic factor in determining the photocatalytic performance is the need to use a suitable and effective semiconductor photocathode. Among many semiconductors, silicon, which is abundant and cheap, is the most promising small bandgap semiconductor (1.12eV), whose bandgap absorption almost perfectly matches the near-infrared light and visible light in the solar spectrum The energy band structure can fully meet the requirements of the semiconductor conduction band position for photocatalytic pure water splitting and carbon dioxide reduction. However, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B11/054C25B11/087C25B1/55C25B1/04
CPCC25B1/04Y02E60/36
Inventor 林惠文常焜徐旺韩文君秦亚雷
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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