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A kind of manufacturing method of n-type crystalline silicon solar cell and the manufacturing method of back passivation contact structure thereof

A manufacturing method and a technology of a contact structure, applied in the field of solar cells, can solve problems such as poor quality oxide layers, uneven polysilicon thin layers on the surface of silicon wafers, and affecting the quality of tunnel oxide passivation layers, so as to ensure quality and avoid defects Oxide layer, effect of improving conversion efficiency

Active Publication Date: 2021-11-19
YINGLI ENERGY CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the preparation process of the ultra-thin tunneling oxide layer, since the pressure in the furnace tube cannot be evacuated to absolute vacuum in an instant during the vacuuming and heating step, the residual air in the furnace tube may react with the surface of the silicon wafer at high temperature, forming Very poor quality oxide, affecting the quality of the overall tunnel oxide passivation layer
At the same time, the existing silane intake pipeline is an intake pipe at the furnace mouth and an intake pipe at the furnace tail. This air intake method makes it difficult for silane to be evenly distributed in the entire furnace tube in a short time, and silane at high temperature The reaction rate is very fast, and it is easy to cause unevenness of the polysilicon thin layer on the surface of the silicon wafer

Method used

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  • A kind of manufacturing method of n-type crystalline silicon solar cell and the manufacturing method of back passivation contact structure thereof
  • A kind of manufacturing method of n-type crystalline silicon solar cell and the manufacturing method of back passivation contact structure thereof
  • A kind of manufacturing method of n-type crystalline silicon solar cell and the manufacturing method of back passivation contact structure thereof

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Effect test

Embodiment 1

[0039]A method for making a passivation contact structure, using such as figure 1 The shown furnace tube grows, and the interior of the furnace tube is provided with a partition 20 parallel to its own axis. The air vent with the opening and closing function specifically includes the following steps:

[0040] S1: Send the N-type crystalline silicon substrate into the reaction chamber 40 of the diffusion furnace tube, first feed nitrogen gas at a flow rate of 10 slm, adjust the nitrogen gas flow rate, then feed nitrogen gas at a flow rate of 20 slm and perform the first vacuum pumping for 30 minutes, and then vacuumize After the stop, continue to feed nitrogen, feed nitrogen at a flow rate of 20slm for 10 minutes, then feed nitrogen at a flow rate of 1slm for 20 minutes, and raise the temperature to the preset temperature of 580°C under a nitrogen atmosphere, and vacuumize for the second time for 3 minutes. After the temperature stabilized for about 3 minutes, oxygen was introd...

Embodiment 2

[0043] A method for making a passivation contact structure, using such as figure 1 The shown furnace tube grows, and the interior of the furnace tube is provided with a partition 20 parallel to its own axis. The opening and closing function of the exhaust hole specifically includes the following steps:

[0044] S1: Send the N-type crystalline silicon substrate into the reaction chamber 40 of the diffusion furnace tube, first feed nitrogen gas at a flow rate of 15 slm, adjust the nitrogen gas flow rate, then feed nitrogen gas at a flow rate of 30 slm and perform the first vacuum pumping for 20 minutes, and then vacuumize After stopping, continue to feed nitrogen, feed nitrogen at a flow rate of 30slm for 8 minutes, then feed nitrogen at a flow rate of 3slm for 15 minutes, and raise the temperature to the preset temperature of 600°C under a nitrogen atmosphere, and vacuumize for the second time for 3 minutes. After the temperature is stabilized for about 3 minutes, oxygen is in...

Embodiment 3

[0047] A method for making a passivation contact structure, using such as figure 1 The shown furnace tube grows, and the interior of the furnace tube is provided with a partition 20 parallel to its own axis. The air vent with the opening and closing function specifically includes the following steps:

[0048] S1: Send the N-type crystalline silicon substrate into the reaction chamber 40 of the diffusion furnace tube, first feed nitrogen gas at a flow rate of 20 slm, adjust the flow rate of nitrogen gas, then feed nitrogen gas at a flow rate of 50 slm and perform the first vacuum pumping for 10 minutes, and then vacuumize After stopping, continue to feed nitrogen gas, feed nitrogen gas at a flow rate of 50 slm for 5 minutes, and then feed nitrogen gas at a flow rate of 5 slm for 10 minutes, and raise the temperature to the preset temperature of 650 ° C under a nitrogen atmosphere, and vacuumize for the second time for 3 minutes. After the temperature stabilized for about 3 min...

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Abstract

The invention relates to the technical field of solar cells, and specifically discloses a manufacturing method of an N-type crystalline silicon solar cell and a manufacturing method of a passivation contact structure on the back side. The manufacturing method of the passivation contact structure includes the following steps: vacuumize under nitrogen atmosphere and heat up to a preset temperature under nitrogen atmosphere, grow a tunnel oxide layer on the back of N-type crystalline silicon substrate; A cavity is left to allow silane gas to prepare a polysilicon layer on the tunnel oxide layer, and then perform doping treatment to obtain a passivation contact structure. The manufacturing method of the passivation contact structure provided by the present invention can effectively avoid the generation of bad oxide layer on the surface of the silicon substrate, guarantee the quality of the tunneling oxide layer, and prepare a polysilicon layer with uniform thickness on the tunneling oxide layer, thereby obtaining quality Good passivation contact structure.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for manufacturing an N-type crystalline silicon solar cell and a method for manufacturing the back passivation contact structure. Background technique [0002] Topcon is a Tunnel Oxide Passivated Contact solar cell technology based on the principle of selective carriers. Its cell structure is an N-type silicon substrate cell. The key technology is to prepare an ultra-thin layer on the back of the cell. A tunnel oxide layer and a thin layer of highly doped polysilicon, which together form the passivation contact structure. The structure provides good surface passivation for the back of the silicon wafer, effectively reduces surface recombination and metal contact recombination, and improves the open circuit voltage and short circuit current of the battery. [0003] At present, the ultra-thin tunnel oxide layer in Topcon's passivation contact structure can be formed b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 马红娜李锋史金超张伟刘少华李雪涛宋连胜尚琪陈志军
Owner YINGLI ENERGY CHINA