Method for increasing open-circuit voltage of solar cell based on additive
A solar cell and open-circuit voltage technology, applied in the field of solar cells, can solve problems such as low open-circuit voltage and restrict device performance, and achieve the effect of increasing open-circuit voltage, reducing carrier loss, and achieving obvious effects.
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[0027] The method for improving the open circuit voltage of perovskite solar cells based on additives in the present invention is to introduce additives into perovskite materials, thereby improving the open circuit voltage of perovskite solar cells; the preparation method of corresponding solar cells, in general, The method is to sequentially prepare a transparent conductive layer, a charge transport layer, an insulating layer, and a carbon counter electrode layer on the substrate, and then fill the precursor liquid in the three-layer mesoporous film structure, and complete the device preparation after annealing; specifically, the following steps may be included:
[0028] (1) Prepare a transparent conductive layer, a charge transport layer, an insulating layer, and a carbon electrode sequentially on the substrate; these transparent conductive layers, charge transport layers, insulating layers, and carbon electrode layers are preferably mesoporous, with a total thickness of 13 to...
Embodiment 1
[0033] (1) Prepare a transparent conductive layer, a charge transport layer, an insulating layer and a carbon electrode sequentially on the substrate;
[0034] (2) Prepare a clear and transparent perovskite precursor without adding ammonium hypophosphite, in which the perovskite content is 1 M;
[0035] (3) Fill the blank device with 2.5 microliters of perovskite precursor solution, 100 o C annealed for 5 min.
Embodiment 2
[0037] (1) Prepare a transparent conductive layer, a charge transport layer, an insulating layer and a carbon electrode sequentially on the substrate;
[0038] (2) Ammonium hypophosphite was added to the perovskite precursor solution in an amount of 0.25 mol / L, and stirred evenly to obtain a clear and transparent precursor solution, in which the perovskite content was 1 M;
[0039] (3) Fill the blank device with 2.5 mL of perovskite precursor solution, 100 o C annealed for 5 min.
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