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Integrated photoelectric detection device based on disc metasurface structure narrow-band filtering

A narrowband filtering and photoelectric detection technology, applied in the field of photodetectors, can solve the problems of peak width at half maximum, high loss, low transmittance, etc., to reduce the impact and achieve the effect of hyperspectral narrowband spectral detection

Inactive Publication Date: 2020-12-08
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the spectroscopic characteristics of metasurface structures still have problems such as large loss, wide peak width at half maximum, low transmittance, and poor integration, and the current research on metasurface structures in spectroscopic field still focuses on spectral resolution and color In the display field, the perfect integration of metasurface structures and photodetectors still needs further research

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  • Integrated photoelectric detection device based on disc metasurface structure narrow-band filtering
  • Integrated photoelectric detection device based on disc metasurface structure narrow-band filtering
  • Integrated photoelectric detection device based on disc metasurface structure narrow-band filtering

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Embodiment 1

[0026] An integrated photodetector device based on disc metasurface structure narrow-band filtering, such as Figure 1-4 As shown, the structure of the detector is as follows from bottom to top: bottom to top: bottom electrode structure 1, semiconductor layer 2, metal thin film layer 3, dielectric layer 4 and top metal disc structure 5.

[0027] Wherein the bottom electrode structure 1 is a bottom silver electrode structure prepared by thermal evaporation, with a thickness of 100 nm;

[0028] The semiconductor layer 2 is a PN type semiconductor layer prepared by PECVD, with a thickness of 1500nm;

[0029] Metal thin film layer 3 is a silver thin film layer prepared by thermal evaporation, with a thickness of 20nm;

[0030] The dielectric layer 4 adopts a silicon dioxide dielectric layer prepared by PECVD; the thickness is 150nm

[0031] The metal disk structure 5 is a silver disk structure prepared by thermal evaporation; the thickness is 20nm, the period is 600nm, and the d...

Embodiment 2

[0035] An integrated photodetector device based on disc metasurface structure narrow-band filtering, such as Figure 1-4 As shown, the structure of the detector is as follows from bottom to top: the structure of the detector from bottom to top is as follows: from bottom to top: bottom electrode structure 1, semiconductor layer 2, metal thin film layer 3, dielectric layer 4 And the metal disc structure 5 on the top.

[0036] Wherein the bottom electrode structure 1 is a bottom gold electrode structure prepared by thermal evaporation, with a thickness of 100 nm;

[0037] The semiconductor layer 2 is an indium gallium arsenide semiconductor layer with a thickness of 1500 nm;

[0038] The metal thin film layer 3 adopts a gold thin film layer prepared by thermal evaporation, and the thickness is 15nm;

[0039] The dielectric layer 4 is a silicon nitride dielectric layer prepared by PECVD; the thickness is 100nm

[0040] The metal disk structure 5 is a gold disk structure prepare...

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Abstract

The invention discloses an integrated photoelectric detector based on disc metasurface structure narrowband filtering. The detector structurally comprises a bottom electrode structure, a semiconductorlayer, a metal film layer, a dielectric layer and a top metal disc structure from bottom to top. A plasmon resonance mode supported by a disc metasurface structure and a cavity mode supported by themetasurface structure - dielectric layer - metal film layer are subjected to resonance coupling, a selective transmission narrow-band spectrum is generated, and the narrow-band photoelectric detectioncharacteristics of visible and near-infrared bands are realized in combination with the semiconductor layer; due to the arrangement of a metal film, the influence of an electrode structure on integration is effectively reduced,the high integration of a plurality of narrow-band filtering nano arrays is facilitated, benefits are obtained from the regular hexagon shape of the disc metasurface structure in spatial distribution, and the influence of the polarization state of incident light is avoided. An integrated detector has the characteristics of miniaturization, integration and tunability, and has a good application prospect in the fields of optoelectronic devices and spectral imaging.

Description

technical field [0001] The invention relates to the field of photodetectors, in particular to an integrated photodetection device based on a disc metasurface structure for narrow-band filtering. Background technique [0002] The photodetector is the core device in the field of spectral imaging. Based on the energy band theory, it converts the incident light signal into an electrical signal and realizes the photoelectric conversion function. However, most of the traditional photodetectors respond in a wide band, and require the help of a spectroscopic system to achieve fine spectral resolution. At present, the spectroscopic system is generally an optical system dominated by gratings or an optical filter dominated by organic materials. The bulky and complex system of the optical system is not conducive to the integration and miniaturization of the device; the dye-based optical filter has poor stability and low transmittance. , and it is also difficult to deeply integrate with...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0224H01L31/0232H01L31/102
CPCH01L31/02165H01L31/022408H01L31/02327H01L31/102
Inventor 吴志鹏王琦龙翟雨生
Owner SOUTHEAST UNIV
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