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Terahertz fano resonance super-structure device capable of realizing efficient light control

A terahertz fano and resonance technology, which is used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of initial Fano resonance weakening, loss of Fano resonance modulation amplitude range, etc., so that the preparation process can be streamlined , The effect of large batch processing difficulty and high resonance intensity

Inactive Publication Date: 2020-12-08
成都能太科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, expensive femtosecond pulses are usually required as optical pump sources
On the other hand, what is more serious is that once the photoactive material is covered on the surface of the terahertz Fano superdevice, the initial Fano resonance of the pristine device will be severely weakened even without optical pumping, and the amplitude will drop by up to 50%, which makes Fano A drastic loss of modulation amplitude range for the resonance
In previous reports [1-5], the modulation amplitude of Fano is difficult to exceed 0.3, no matter how to optimize the photoactive layer material, the reported modulation amplitude has reached the limit

Method used

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  • Terahertz fano resonance super-structure device capable of realizing efficient light control
  • Terahertz fano resonance super-structure device capable of realizing efficient light control
  • Terahertz fano resonance super-structure device capable of realizing efficient light control

Examples

Experimental program
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Effect test

Embodiment 1

[0050] A terahertz fano resonant meta-device capable of high-efficiency light control, comprising the following steps:

[0051] (1) Spin-coat positive photoresist on high-resistance silicon with a resistivity of 0.03 S / m, and develop a square split double split ring shape through a conventional photolithography process. The dielectric constant of high-resistance silicon is 11.9, and the shape is square with side length 14 mm and a thickness of 500 mm.

[0052] (2) Evaporate aluminum with a thickness of 200 nm by thermal evaporation. The current used in the thermal evaporation process is 40A, and the evaporation time is 30 minutes.

[0053] (3) Wash off the residual photoresist, and finally leave a metal microstructure with a specific shape on the high-resistance silicon or SOI substrate. The physical and structural parameters are as follows: image 3 (a).

[0054] (4) Etch the back of the high-resistance silicon by ion etching process to reduce its thickness to 3 mm, and lea...

Embodiment 2

[0057] A terahertz fano resonant meta-device capable of high-efficiency light control, comprising the following steps:

[0058] (1) Spin-coat positive photoresist on SOI to develop a square split double split ring shape. The resistivity of the top silicon of SOI is 0.03S / m, the dielectric constant is 11.9, the shape is square, the side length is 14 mm, the thickness of the top silicon is 0.5 mm, the thickness of the middle silicon dioxide insulating layer is 2-4 mm, and the thickness of the bottom silicon is is 500mm.

[0059] (2) Aluminum with a thickness of 100 nm was evaporated by thermal evaporation. The current used in the thermal evaporation process was 40A, and the evaporation time was 30 minutes.

[0060] (3) Wash off the residual photoresist, and finally leave a metal microstructure with a specific shape on the SOI substrate, which is the same as that in Example 1 image 3 (a) Same.

[0061] (4) Etch the silicon at the bottom of the SOI by an ion etching process, e...

Embodiment 3

[0064] A terahertz fano resonant meta-device capable of high-efficiency light control, comprising the following steps:

[0065] (1) Spin-coat positive photoresist on SOI to develop an asymmetric nested circular shape in the ring. The resistivity of the top silicon of SOI is 0.03 S / m, the dielectric constant is 11.9, the shape is square, the side length is 14 mm, the thickness of the top silicon is 0.5 mm, the thickness of the middle silicon dioxide insulating layer is 2-4 mm, and the thickness of the bottom silicon is is 500 mm.

[0066] (2) Plating gold with a thickness of 300 nm by magnetron sputtering, the sputtering current is 15A, and the evaporation time is 8 minutes.

[0067] (3) Wash off the residual photoresist, and finally leave a metal microstructure with a specific shape on the SOI substrate. This structure is shown as Figure 5 (a).

[0068] (4) Etch the silicon at the bottom of the SOI by an ion etching process, etch all of it, leaving only the top silicon and...

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Abstract

A terahertz meta-structure device with strong Fano resonance is designed, and the intensity of the terahertz meta-structure device can be modulated by low-power continuous light. The device is simplein structure, a thin silicon substrate is obtained through the technology of etching high-resistance silicon and SOI(silicon on an insulating substrate) on the back side, the used substrate serves asa photoactive layer, extra photoactive materials are not needed, the overall preparation process is matched with an existing processing technology, and the device can be processed in a process mode, is not influenced by the technology of operators and is high in yield. Because carriers in the silicon substrate can be excited by photons with the forbidden bandwidth higher than that of the silicon substrate, the Fano resonance intensity can be modulated by low-power continuous light, an expensive femtosecond pulse source is not needed, 90% of modulation depth and 0.6-0.85 of modulation amplitudecan be easily obtained, the modulation amplitude is 2-3 times of that reported in the past, and the modulation efficiency is greatly improved. The terahertz meta-structure device opens up a new way for biochemical sensors with higher sensitivity pursuit.

Description

technical field [0001] The present invention relates to the field of metamaterial devices and terahertz technology, and more specifically, to a terahertz fano resonant metadevice whose intensity can be efficiently controlled by continuous laser. Background technique [0002] Fano's asymmetric resonance effect is originally the result of the overlapping of continuous excited states and discrete excited states in an atomic system, resulting in a "zero absorption" phenomenon in a specific optical frequency band. The spectrum of the Fano resonance mode has obvious asymmetric features, which is in sharp contrast to the traditional Lorentz resonance. In recent years, sharp Fano resonances have also been observed in asymmetric split-ring resonators based on terahertz (THz) metasurfaces. The sharp Fano resonance can be widely used in THz notch filters, THz narrowband filters, THz switching devices and THz slow optical devices, etc. At the same time, the Fano resonance of the THz m...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/10H01L31/18H01L21/3065
CPCH01L21/3065H01L31/035281H01L31/10H01L31/18H01L31/1804Y02P70/50
Inventor 李继涛李杰郑程龙张明张凤林金丹丹
Owner 成都能太科技有限公司
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