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Manufacturing method of ITO target material high-purity nano indium tin oxide powder

A technology of indium tin oxide powder and manufacturing method, which is applied in chemical instruments and methods, nanotechnology, inorganic chemistry, etc., and can solve problems such as difficult cleaning of inorganic acid ions

Pending Publication Date: 2020-12-15
中山智隆新材料科技有限公司
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  • Claims
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Problems solved by technology

[0004] In order to avoid the defects in the above technical solutions and solve the problem that inorganic acid ions are difficult to clean thoroughly, this solution provides a method for manufacturing high-purity nano-indium tin oxide powder for ITO targets, using organic acid salts of tin and indium as raw materials

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  • Manufacturing method of ITO target material high-purity nano indium tin oxide powder
  • Manufacturing method of ITO target material high-purity nano indium tin oxide powder

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Embodiment Construction

[0019] The present invention is described in further detail below in conjunction with embodiment.

[0020] Such as figure 1 , 2 As shown, a kind of ITO target material high-purity nano indium tin oxide powder manufacturing method provided by the present invention comprises the following steps:

[0021] a. Dissolve indium oxalate (In2(C2O4)3) and tin oxalate (Sn(C2O4)2) in deionized water at a ratio of 8.19:1 or 7.7:1 or 8.7:1 to form a transparent aqueous solution; or indium acetate (In(C2H3O2)3) and tin acetate (Sn(C2H3O2)4) are dissolved in deionized water according to the ratio of 11.89:1 or 11.4:1 or 12.4:1 to form a transparent aqueous solution;

[0022] b. Dissolving urea or ammonium carbonate or ammonium bicarbonate in the above-mentioned deionized water to form a transparent aqueous solution whose concentration is 0.4 or 0.6 or 0.8mol / L;

[0023] c. Mix the above two solutions and transfer them into a reaction kettle, then put the reaction kettle into an oven for hy...

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Abstract

The invention discloses a manufacturing method of ITO target high-purity nano indium tin oxide powder, and the method comprises the following steps: proportionally dissolving indium oxalate and tin oxalate or indium acetate and tin acetate in deionized water to form a transparent water solution, adding urea or ammonium carbonate or ammonium bicarbonate, mixing the two solutions, and transferring the mixture into a reaction kettle; and then putting the reaction kettle into a drying oven for hydrothermal reaction to prepare the nano indium tin oxide powder. The concentration of inorganic acid radical ions in the nano indium tin oxide powder prepared by adopting the technical scheme can be controlled to be less than 10ppm, and the size of the nano indium tin oxide powder can be controlled byOH~ions generated by hydrolysis reaction of ammonium salt. The ITO target material with high purity and high density can be produced, and a reliable and selectable method is provided for manufacturinghigh-end and high-quality ITO films.

Description

technical field [0001] The invention belongs to the field of ITO target material manufacturing, in particular to a method for manufacturing high-purity nano-indium tin oxide powder in the ITO target material manufacturing process. Background technique [0002] Indium tin oxide (ITO) is a semiconductor oxide composed of indium oxide and tin oxide. sn 4+ Ions are solid dissolved in In 2 o 3 Alternative doping forms n-type semiconductors in the crystal lattice. ITO film has the advantages of low resistivity, high light transmittance, good chemical stability and etching performance, and is widely used in flat panel displays, transparent heating elements, antistatic films, electromagnetic protective films, transparent electrodes of solar cells, anti-reflective coatings and Cutting-edge manufacturing fields such as thermal mirrors and other optoelectronic devices. The preparation method of the ITO target is to prepare nano-indium oxide and tin oxide powder first, then mix the...

Claims

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Application Information

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IPC IPC(8): C01G19/00B82Y40/00
CPCC01G19/00B82Y40/00C01P2004/64C01P2004/30C01P2004/03
Inventor 丁金铎葛春桥崔恒柳春锡金志洸王梦涵
Owner 中山智隆新材料科技有限公司
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