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Semiconductor device and forming method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as unstable performance of fin field effect transistors, and achieve the effects of improving performance stability, reducing heat generation, and reducing contact resistance.

Pending Publication Date: 2020-12-15
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, as the size of semiconductor devices shrinks and the device density increases, the performance of the formed fin field effect transistor is unstable.

Method used

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  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

Examples

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no. 1 example

[0040] Figure 10 to Figure 18 It is a structural schematic diagram of the formation process of the semiconductor device in the first embodiment of the present invention.

[0041] first reference Figure 10 , a substrate 100 is provided, and a plurality of fins 200 arranged separately are formed on the substrate 100 .

[0042] In this embodiment, the material of the substrate 100 is monocrystalline silicon; in other embodiments, the substrate 100 can be monocrystalline silicon, polycrystalline silicon or amorphous silicon; the substrate 100 can also be silicon, germanium , silicon germanium, gallium arsenide and other semiconductor materials.

[0043] In this embodiment, the method for forming the fin 200 includes: forming a hard mask layer (not shown in the figure) on the substrate 100, and the hard mask layer covers the position where the fin 200 is formed. , using the hard mask layer as a mask to etch a partial thickness of the substrate 100 to form a plurality of discre...

no. 2 example

[0085] refer to Figure 19 to Figure 27 It is a structural schematic diagram of the formation process of the semiconductor device in the second embodiment of the present invention.

[0086] refer to Figure 19 , a substrate 100 is provided, and a plurality of fins 200 arranged separately are formed on the substrate 100 .

[0087] In this embodiment, the material of the substrate 100 is single crystal silicon.

[0088] refer to Figure 20 to Figure 21 , forming a dummy gate structure 300 on the substrate 100 , and the dummy gate structure 300 straddles the fin portion 200 .

[0089] Figure 21 yes Figure 20 Sectional view on line A-A.

[0090] In this embodiment, the hard mask layer 310 is formed on the top of the dummy gate structure 300 ; in other embodiments, the hard mask layer 310 may not be formed on the top of the dummy gate structure 300 .

[0091] In this embodiment, the formation of the hard mask layer 310 on the top of the dummy gate structure 300 can protect...

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PUM

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Abstract

The invention provides a semiconductor device and a forming method thereof. The method comprises steps of providing a substrate, and forming a fin part on the substrate; forming a pseudo gate structure on the substrate, wherein the pseudo gate structure stretches across the fin parts; etching the fin parts on the two sides of the pseudo gate structure, and forming grooves in the fin parts; the groove being filled with a stress layer; forming an interlayer dielectric layer on the stress layer; and etching to remove the interlayer dielectric layer and part of the thickness of the stress laye. According to the forming method, the contact area between the formed stress layer and the conducting layer is increased, so contact resistance between the stress layer and the conducting layer is reduced, the heating phenomenon caused by the contact resistance in the using process of the semiconductor device is reduced, the service life of the semiconductor device is prolonged, and stability of useperformance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, the device is being widely used at present. The control ability of the traditional planar device to the channel current is weakened, resulting in the short channel effect and causing the leakage current, which ultimately affects the electrical performance of the semiconductor device. [0003] In order to overcome the short channel effect of the device and suppress the leakage current, the prior art proposes a fin field effect transistor (Fin FET), which is a common multi-gate device, and the structure of the fin field effect transistor includes : a fin and an isolation structure ...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/66545H01L29/66795H01L29/785
Inventor 王楠
Owner SEMICON MFG INT (SHANGHAI) CORP